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An analysis of light induced degradation with optical source properties in boron-doped p-type Cz-Si solar cells

Authors
Kim, S.M.Bae, S.Kim, Y.D.Park, S.Kang, Y.Lee, H.Kim, D.
Issue Date
2014
Publisher
Korea Federation of Science and Technology
Keywords
Cz-si; Inverse internal quantum efficiency; Light induced degradation; Normalized defects concentration
Citation
Korean Journal of Materials Research, v.24, no.6, pp.305 - 309
Indexed
SCOPUS
KCI
Journal Title
Korean Journal of Materials Research
Volume
24
Number
6
Start Page
305
End Page
309
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/100695
DOI
10.3740/MRSK.2014.24.6.305
ISSN
1225-0562
Abstract
When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minoritycarrier diffusion-length with internal quantum efficiency (IQE) analysis. © Materials Research Society of Korea.
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Graduate School of Energy and Environment (KU-KIST GREEN SCHOOL) > Department of Energy and Environment > 1. Journal Articles

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