High-Yield Assembly of Graphene Field-Effect Transistors under a Non-Uniform Electric Field
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Hyunik | - |
dc.contributor.author | Oh, Sooyeoun | - |
dc.contributor.author | Kimz, Jihyun | - |
dc.date.accessioned | 2021-09-05T16:59:19Z | - |
dc.date.available | 2021-09-05T16:59:19Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014 | - |
dc.identifier.issn | 2162-8742 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/101039 | - |
dc.description.abstract | Graphene field-effect transistors (GFETs) were fabricated by aligning the dispersed graphene flakes precisely with the pre-defined Ti/Au electrodes on SiO2/Si substrate by using a non-uniform electric field, where a large density of the graphene flakes was prepared by sonicating three-dimensional (3-D) graphene foam. Effects of ultra-violet (UV) illuminations and vacuum annealing on the electrical characteristics of the processed GFETs were investigated. A remarkable increase in conductivity and carrier mobility was observed after vacuum annealing at 100 degrees C, which was more effective than UV illuminations to improve the electrical performance of our GFETs. Our method to obtain the dispersed graphene flakes from 3-D graphene foam and assemble them by a dielectrophoretic force allows a reliable, scalable, and controllable fabrication of GFETs. (C) 2013 The Electrochemical Society. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | High-Yield Assembly of Graphene Field-Effect Transistors under a Non-Uniform Electric Field | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kimz, Jihyun | - |
dc.identifier.doi | 10.1149/2.007402ssl | - |
dc.identifier.scopusid | 2-s2.0-84897806370 | - |
dc.identifier.wosid | 000329120100001 | - |
dc.identifier.bibliographicCitation | ECS SOLID STATE LETTERS, v.3, no.2, pp.M15 - M17 | - |
dc.relation.isPartOf | ECS SOLID STATE LETTERS | - |
dc.citation.title | ECS SOLID STATE LETTERS | - |
dc.citation.volume | 3 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | M15 | - |
dc.citation.endPage | M17 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.