Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching
DC Field | Value | Language |
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dc.contributor.author | Yoon, Ji-Wook | - |
dc.contributor.author | Yoon, Jung Ho | - |
dc.contributor.author | Lee, Jong-Heun | - |
dc.contributor.author | Hwang, Cheol Seong | - |
dc.date.accessioned | 2021-09-05T17:14:01Z | - |
dc.date.available | 2021-09-05T17:14:01Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/101137 | - |
dc.description.abstract | The electrical resistance switching (RS) properties of amorphous HfO2 (a-HfO2) and crystalline HfO2 (c-HfO2) thin films grown on a TiN substrate via atomic layer deposition were examined using DC current-voltage (I-V) sweep and AC impedance spectroscopic (IS) analyses. The rapid thermal annealing of the a-HfO2 film at 500 degrees C under a N-2 atmosphere for 5 min crystallized the HfO2 film and induced an interfacial TiON barrier layer. The a-HfO2 sample showed fluent bipolar RS performance with a high on/off ratio (similar to 500), whereas the c-HfO2 sample showed a much lower on/off ratio (<similar to 10), but its switching uniformity was better than that of a-HfO2. Such critical differences can be mainly attributed to the absence and presence of the TiON barrier layer in the a-HfO2 and c-HfO2 samples, respectively. The AC IS especially enabled the resistance states of the HfO2/Pt interface and the HfO2/TiN interface to be separately examined during one complete switching cycle of each sample. Although the Pt/c-HfO2 interface has a Schottky barrier in the pristine state, it disappeared once the c-HfO2 was electroformed and was not recovered even after the reset step. In contrast, the Pt/a-HfO2 interface partly recovered the Schottky barrier after the reset. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | STATES | - |
dc.title | Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jong-Heun | - |
dc.identifier.doi | 10.1039/c4nr00507d | - |
dc.identifier.scopusid | 2-s2.0-84901789714 | - |
dc.identifier.wosid | 000337143900054 | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.6, no.12, pp.6668 - 6678 | - |
dc.relation.isPartOf | NANOSCALE | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 6 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 6668 | - |
dc.citation.endPage | 6678 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | STATES | - |
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