Impact of transparent electrode on photoresponse of ZnO-based phototransistor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Seunghyup | - |
dc.contributor.author | Ahn, Seung-Eon | - |
dc.contributor.author | Jeon, Yongwoo | - |
dc.contributor.author | Ahn, Ji-Hoon | - |
dc.contributor.author | Song, Ihun | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.contributor.author | Yun, Dong-Jin | - |
dc.contributor.author | Kim, Jungwoo | - |
dc.contributor.author | Choi, Hyung | - |
dc.contributor.author | Chung, U-In | - |
dc.contributor.author | Park, Jaechul | - |
dc.date.accessioned | 2021-09-05T17:56:05Z | - |
dc.date.available | 2021-09-05T17:56:05Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2013-12-16 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/101282 | - |
dc.description.abstract | ZnO-based photo-thin film transistors with enhanced photoresponse were developed using transparent conductive oxide contacts. Changing the electrode from opaque Mo to transparent In-Zn-O increases the photocurrent by five orders of magnitude. By changing the opacity of each source and drain electrode, we could observe how the photoresponse is affected. We deduce that the photocurrent generation mechanism is based on an energy band change due to the photon irradiation. More importantly, we reveal that the photocurrent is determined by the energy barrier of injected electrons at the interface between the source electrode and the active layer. (C) 2013 AIP Publishing LLC. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | LIGHT-EMITTING-DIODE | - |
dc.subject | MOS2 PHOTOTRANSISTORS | - |
dc.subject | OXIDE | - |
dc.subject | ULTRAVIOLET | - |
dc.subject | PERFORMANCE | - |
dc.subject | PHOTODETECTORS | - |
dc.subject | ARRAYS | - |
dc.title | Impact of transparent electrode on photoresponse of ZnO-based phototransistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
dc.identifier.doi | 10.1063/1.4855055 | - |
dc.identifier.scopusid | 2-s2.0-84891424047 | - |
dc.identifier.wosid | 000329973800011 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.103, no.25 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 103 | - |
dc.citation.number | 25 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODE | - |
dc.subject.keywordPlus | MOS2 PHOTOTRANSISTORS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | ULTRAVIOLET | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
dc.subject.keywordPlus | ARRAYS | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.