Systematic and consistent ferromagnetism in InMnP:Zn bilayers for various Mn concentrations and annealing temperatures
DC Field | Value | Language |
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dc.contributor.author | Shon, Yoon | - |
dc.contributor.author | Yoon, Im Taek | - |
dc.contributor.author | Lee, Sejoon | - |
dc.contributor.author | Kwon, Y. H. | - |
dc.contributor.author | Yoon, Chong S. | - |
dc.contributor.author | Park, C. S. | - |
dc.contributor.author | Lee, Cheol Jin | - |
dc.contributor.author | Lee, Dong Jin | - |
dc.contributor.author | Kim, H. S. | - |
dc.contributor.author | Kang, T. W. | - |
dc.date.accessioned | 2021-09-05T18:17:35Z | - |
dc.date.available | 2021-09-05T18:17:35Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2013-12 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/101405 | - |
dc.description.abstract | The p-type InP:Zn epilayers were prepared by using metal-organic chemical vapor deposition, and Mn was subsequently deposited onto the epilayer by using molecular beam epitaxy. The p-type InMnP:Zn epilayers were annealed at relatively low temperatures of 200-350 A degrees C and contained no secondary phases such as InMn, MnP, and MnO2, as verified by x-ray diffraction. However, minute presence of MnO2 was confirmed using transmission electron microscopy, which agreed with the magnetic properties measured by using a superconducting quantum interference device (SQUID). From the SQUID measurements, consistent and systematic ferromagnetic properties with clear ferromagnetic hysteresis loops were observed. The Curie temperature, T (C) , which persisted up to similar to 180 K, was recorded depending on the Mn concentrations and annealing temperature. These results indicate that the ferromagnetic semiconductor InMnP:Zn can be fabricated at a very low annealing temperature without forming ferromagnetic precipitates except for MnO2. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | NEUTRAL MANGANESE ACCEPTOR | - |
dc.subject | INP | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | GA1-XMNXAS | - |
dc.title | Systematic and consistent ferromagnetism in InMnP:Zn bilayers for various Mn concentrations and annealing temperatures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, C. S. | - |
dc.contributor.affiliatedAuthor | Lee, Cheol Jin | - |
dc.identifier.doi | 10.3938/jkps.63.2158 | - |
dc.identifier.scopusid | 2-s2.0-84890497047 | - |
dc.identifier.wosid | 000328627800020 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.63, no.11, pp.2158 - 2164 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 63 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 2158 | - |
dc.citation.endPage | 2164 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001844338 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | NEUTRAL MANGANESE ACCEPTOR | - |
dc.subject.keywordPlus | INP | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | GA1-XMNXAS | - |
dc.subject.keywordAuthor | Semiconductors | - |
dc.subject.keywordAuthor | Chemical vapor deposition (CVD) | - |
dc.subject.keywordAuthor | Molecular beam epitaxy (MBE) | - |
dc.subject.keywordAuthor | InP | - |
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