Modeling Sub-Threshold Current-Voltage Characteristics in Thin Film Transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Sungsik | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.contributor.author | Nathan, Arokia | - |
dc.date.accessioned | 2021-09-05T19:29:55Z | - |
dc.date.available | 2021-09-05T19:29:55Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2013-11 | - |
dc.identifier.issn | 1551-319X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/101676 | - |
dc.description.abstract | In this paper, we present a physically-based compact model for the sub-threshold behavior in a TFT with an amorphous semiconductor channel. Both drift and diffusion current components are considered and combined using an harmonic average. Here, the diffusion component describes the exponential current behavior due to interfacial deep states, while the drift component is associated with presence of localized deep states formed by dangling bonds broken from weak bonds in the bulk and follows a power law. The proposed model yields good agreement with measured results. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | EXTRACTION | - |
dc.subject | TECHNOLOGY | - |
dc.title | Modeling Sub-Threshold Current-Voltage Characteristics in Thin Film Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanghun | - |
dc.identifier.doi | 10.1109/JDT.2013.2256878 | - |
dc.identifier.scopusid | 2-s2.0-84888325436 | - |
dc.identifier.wosid | 000327251900003 | - |
dc.identifier.bibliographicCitation | JOURNAL OF DISPLAY TECHNOLOGY, v.9, no.11, pp.883 - 889 | - |
dc.relation.isPartOf | JOURNAL OF DISPLAY TECHNOLOGY | - |
dc.citation.title | JOURNAL OF DISPLAY TECHNOLOGY | - |
dc.citation.volume | 9 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 883 | - |
dc.citation.endPage | 889 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordAuthor | Amorphous oxide semiconductors (AOS) | - |
dc.subject.keywordAuthor | physically-based compact modeling | - |
dc.subject.keywordAuthor | sub-threshold characteristics | - |
dc.subject.keywordAuthor | thin film transistors (TFTs) | - |
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