Index-Matched Indium Tin Oxide Electrodes for Capacitive Touch Screen Panel Applications

Abstract

Index-matched indium tin oxide (ITO) electrodes for capacitive touch screen panels have been fabricated to improve optical transmittance and reduce the difference of reflectance (Delta R) between the etched and un-etched regions. 8.5 nm Nb2O5 and 49 nm SiO2 thin films were deposited by magnetron sputtering as index-matching layers between an ITO electrode and a glass substrate. In case of 30 nm ITO electrode, a 4.3% improvement in the optical transmittance and a Delta R of less than 1% were achieved, along with a low sheet resistance of 90 Omega/square.