Effect of deposition temperature on cubic boron nitride thin film deposited by unbalanced magnetron sputtering method with a nanocrystalline diamond buffer layer
- Authors
- Lee, Eun-Sook; Park, Jong-Keuk; Lee, Wook-Seong; Seong, Tae-Yeon; Baik, Young-Joon
- Issue Date
- 11월-2013
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- cubic boron nitride (c-BN); sputtering; microstructure; residual stress; transmission electron microscopy
- Citation
- METALS AND MATERIALS INTERNATIONAL, v.19, no.6, pp.1323 - 1326
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- METALS AND MATERIALS INTERNATIONAL
- Volume
- 19
- Number
- 6
- Start Page
- 1323
- End Page
- 1326
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/101788
- DOI
- 10.1007/s12540-013-6029-4
- ISSN
- 1598-9623
- Abstract
- Cubic boron nitride (c-BN) films were deposited by the unbalanced magnetron sputtering method. A Si substrates coated with a nanocrystalline diamond (NCD) was used as a substrate. The deposition temperature was varied systematically from room temperature to 800 A degrees C. A boron nitride target was used which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing. The c-BN phase forms for all samples, irrespective of the deposition temperature, with a little amount of hexagonal phase existing as an intrinsic turbostratic boron nitride (t-BN) layer, whose thickness decreased with increasing temperature. The residual stress was maintained at a nearly constant compressive value. The adhesion improved markedly at high deposition temperature, but the insertion of the NCD buffer layer was ineffective in inhibiting the formation of t-BN layer under the present deposition condition.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.