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Fabrication of Nano-Sized Magnetic Tunnel Junctions Using Lift-Off Process Assisted by Atomic Force Probe Tip

Authors
Jung, Ku YoulMin, Byoung-ChulAhn, ChiyuiChoi, Gyung-MinShin, Il-JaePark, Seung-YoungRhie, KungwonShin, Kyung-Ho
Issue Date
9월-2013
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
Magnetic Tunnel Junction; Spin Transfer Torque; E-Beam Lithography; Lift-Off Process
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.9, pp.6467 - 6470
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume
13
Number
9
Start Page
6467
End Page
6470
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/102352
DOI
10.1166/jnn.2013.7616
ISSN
1533-4880
Abstract
We present a fabrication method for nano-scale magnetic tunnel junctions (MTJs), employing e-beam lithography and lift-off process assisted by the probe tip of atomic force microscope (AFM). It is challenging to fabricate nano-sized MTJs on small substrates because it is difficult to use chemical mechanical planarization (CMP) process. The AFM-assisted lift-off process enables us to fabricate nano-sized MTJs on small substrates (12.5 mm x 12.5 mm) without CMP process. The e-beam patterning has been done using bi-layer resist, the poly methyl nnethacrylate (PMMA)/hydrogen silsesquioxane (HSQ). The PMMA/HSQ resist patterns are used for both the etch mask for ion milling and the self-aligned mask for top contact formation after passivation. The self-aligned mask buried inside a passivation oxide layer, is readily lifted-off by the force exerted by the probe tip. The nano-MTJs (160 nm x 90 nm) fabricated by this method show clear current-induced magnetization switching with a reasonable TMR and critical switching current density.
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Rhie, Kung won
과학기술대학 (디스플레이·반도체물리학부 반도체물리전공)
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