Role of n-type seed-layers in microstructural evolution of intrinsic nanocrystalline silicon and solar cell performance
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Ji Eun | - |
dc.contributor.author | Ahn, Seungkyu | - |
dc.contributor.author | Park, Joo Hyung | - |
dc.contributor.author | Yoo, Jinsu | - |
dc.contributor.author | Yoon, Kyung Hoon | - |
dc.contributor.author | Kim, Donghwan | - |
dc.contributor.author | Cho, Jun-Sik | - |
dc.date.accessioned | 2021-09-05T22:26:59Z | - |
dc.date.available | 2021-09-05T22:26:59Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-09 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102392 | - |
dc.description.abstract | Nanocrystalline silicon (nc-Si:H) thin-film n-i-p solar cells were constructed on flexible stainless steel substrates by plasma-enhanced chemical vapor deposition. Influence of the n-type seed-layer on the microstructural evolution of the subsequent intrinsic nc-Si:H absorbers and the resultant performance of nc-Si:H solar cells was investigated. The crystalline volume fraction of the seed-layer can be effectively controlled by varying the hydrogen (H-2) to silane (SiH4) gas flow ratio. Defect-dense amorphous regions were observed at the initial growth stage of the i-layers deposited on low crystalline volume fraction (X-c(n)) n-type seed-layers. Increasing the X-c(n) reduced the amorphous region at the n/i interface of the i nc-Si:H layers, evidenced by Raman scattering and transmission electron microscopy (TEM) measurements. Elimination of the defect-rich amorphous region within the i-layer by depositing the nc-Si:H solar cells on highly crystalline seed-layer caused significant improvements in the short circuit current density (J(sc)) and fill factor (FF). This is mainly due to the enhancement of long-wavelength light response and extraction efficiency of photo-carrier charges. The nc-Si:H solar cells prepared on a highly crystalline seed-layer (X-c(n) = 73%) exhibited a 65.6% higher conversion efficiency than those on the n-type amorphous layers (X-c(n) = 0%). (C) 2013 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | MICROCRYSTALLINE SILICON | - |
dc.subject | BACK REFLECTORS | - |
dc.subject | SUBSTRATE | - |
dc.subject | GROWTH | - |
dc.subject | FILMS | - |
dc.subject | GLASS | - |
dc.title | Role of n-type seed-layers in microstructural evolution of intrinsic nanocrystalline silicon and solar cell performance | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Donghwan | - |
dc.identifier.doi | 10.1016/j.cap.2013.04.006 | - |
dc.identifier.scopusid | 2-s2.0-84885834639 | - |
dc.identifier.wosid | 000322631400033 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.13, no.7, pp.1344 - 1349 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1344 | - |
dc.citation.endPage | 1349 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001819398 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | MICROCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | BACK REFLECTORS | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | GLASS | - |
dc.subject.keywordAuthor | Nanocrystalline silicon | - |
dc.subject.keywordAuthor | Seed-layer | - |
dc.subject.keywordAuthor | Crystallinity | - |
dc.subject.keywordAuthor | Solar cell | - |
dc.subject.keywordAuthor | Flexible substrate | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.