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Anisotropic Magnetoresistance of an Epitaxial Fe Stripe Grown on MgO/GaAs
- Issue Date
- 9월-2013
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Anisotropic Magnetoresistance (AMR); Ordinary Magnetoresistance (OMR); Fe/MgO/GaAs
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.9, pp.6333 - 6335
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 13
- Number
- 9
- Start Page
- 6333
- End Page
- 6335
- ISSN
- 1533-4880
- Abstract
- The anisotropic magnetoresistance of a [100] oriented Fe stripe grown on MgO/GaAs was investigated in order to elucidate the magnetization switching of patterned Fe. A 15 nm thick Fe film was epitaxially grown on MgO/GaAs layers using molecular beam epitaxy and a 50 mu m x 4 mu M shaped Fe stripe was patterned along its magnetic easy axis of [100]. Negative (positive) resistance peaks appear at room (low) temperature in magnetoresistance measurement. A reversal in sign of the peak was evidently observed with decreasing temperature. Such a reversal of resistance peak is caused by the competition between Lorentz force (ordinary) and spin-orbit (extraordinary) dominated scattering processes in a magnetic domain, which is significantly affected by temperature.
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Collections - College of Science > Department of Physics > 1. Journal Articles
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