ZrO2 dielectric-based low-voltage organic thin-film inverters

Abstract

In this paper, the authors first report ZrO2-dielectric based low-voltage organic thin-film complementary metal-oxide semiconductor inverters. Two active layers of p-type pentacene and n-type N,N'-dioctyl-3,4,9,10-perylenedicarboximide were successively deposited on the thermally stable, transparent ZrO2 using the neutral cluster beam deposition method. Based on the good balance between p-and n-type transistors, the complementary inverters exhibited ideal characteristics including sharp inversions, complete switching, high gains, and large voltage swings at low operating voltage levels. (C) 2013 AIP Publishing LLC.