Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Quantum Electrical Transport in Mesoscopic LaAlO3/SrTiO3 Heterostructures

Full metadata record
DC Field Value Language
dc.contributor.authorChang, Jung-Won-
dc.contributor.authorSong, Jonghyun-
dc.contributor.authorLee, Joon Sung-
dc.contributor.authorNoh, Hyunho-
dc.contributor.authorSeung, Sang Keun-
dc.contributor.authorBaasandorj, Lkhagvasuren-
dc.contributor.authorLee, Soon Gul-
dc.contributor.authorDoh, Yong-Joo-
dc.contributor.authorKim, Jinhee-
dc.date.accessioned2021-09-05T23:20:24Z-
dc.date.available2021-09-05T23:20:24Z-
dc.date.created2021-06-14-
dc.date.issued2013-08-
dc.identifier.issn1882-0778-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/102602-
dc.description.abstractWe report the fabrication and electrical measurements for LaAlO3/SrTiO3 (LAO/STO) heterostructures having various lateral sizes. When the sample size is reduced to the sub-micrometer range, the magnetoconductance (MC) curve deviates from classical parabolic behavior. Instead, a negative MC behavior appears with superimposed conductance fluctuations, which is attributed to weak antilocalization and universal conductance fluctuations. Using the Maekawa-Fukuyama model, the spin-orbit scattering and phase coherence lengths are estimated from the MC data, which are dependent on the gate voltage and temperature. Our comprehensive study shows that LAO/STO heterointerfaces provide a useful platform to explore quantum coherent transport of strongly correlated electrons. (C) 2013 The Japan Society of Applied Physics-
dc.languageEnglish-
dc.language.isoen-
dc.publisherJAPAN SOC APPLIED PHYSICS-
dc.subjectINTERFACE-
dc.subjectMAGNETORESISTANCE-
dc.subjectSYSTEMS-
dc.subjectOXIDES-
dc.titleQuantum Electrical Transport in Mesoscopic LaAlO3/SrTiO3 Heterostructures-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, Joon Sung-
dc.contributor.affiliatedAuthorLee, Soon Gul-
dc.contributor.affiliatedAuthorDoh, Yong-Joo-
dc.identifier.doi10.7567/APEX.6.085201-
dc.identifier.scopusid2-s2.0-84883000711-
dc.identifier.wosid000322761300020-
dc.identifier.bibliographicCitationAPPLIED PHYSICS EXPRESS, v.6, no.8-
dc.relation.isPartOfAPPLIED PHYSICS EXPRESS-
dc.citation.titleAPPLIED PHYSICS EXPRESS-
dc.citation.volume6-
dc.citation.number8-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusINTERFACE-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordPlusSYSTEMS-
dc.subject.keywordPlusOXIDES-
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Science and Technology > Semiconductor Physics in Division of Display and Semiconductor Physics > 1. Journal Articles
Graduate School > Department of Applied Physics > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetrics

Total Views & Downloads

BROWSE