Condenson state and its effects on thermoelectric properties in In4Se3
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, Young Soo | - |
dc.contributor.author | Jeong, Mahn | - |
dc.contributor.author | Seo, Won-Seon | - |
dc.contributor.author | Lee, Jong-Heun | - |
dc.contributor.author | Park, Cheol-Hee | - |
dc.contributor.author | Sznajder, Malgorzata | - |
dc.contributor.author | Kharkhalis, Lyubov Yu | - |
dc.contributor.author | Bercha, Dariya M. | - |
dc.contributor.author | Yang, Jihui | - |
dc.date.accessioned | 2021-09-05T23:49:39Z | - |
dc.date.available | 2021-09-05T23:49:39Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-07-10 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102715 | - |
dc.description.abstract | The thermoelectric properties of In4Se3 compounds were investigated, and their unique charge and thermal transport behaviours were interpreted in terms of condenson state for the first time. The effects of Sn-doping both on the carrier localization and lattice thermal conductivity were consistent with the proposed condenson model. Some important physical properties, such as the band gap energy of In4Se3 and the binding energy of the condenson state, are also presented. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | PHONON-SPECTRUM | - |
dc.subject | BAND-STRUCTURE | - |
dc.subject | CRYSTALS | - |
dc.subject | PRESSURE | - |
dc.subject | IN4TE3 | - |
dc.title | Condenson state and its effects on thermoelectric properties in In4Se3 | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jong-Heun | - |
dc.identifier.doi | 10.1088/0022-3727/46/27/275304 | - |
dc.identifier.scopusid | 2-s2.0-84879923498 | - |
dc.identifier.wosid | 000320854700013 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.46, no.27 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.citation.volume | 46 | - |
dc.citation.number | 27 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PHONON-SPECTRUM | - |
dc.subject.keywordPlus | BAND-STRUCTURE | - |
dc.subject.keywordPlus | CRYSTALS | - |
dc.subject.keywordPlus | PRESSURE | - |
dc.subject.keywordPlus | IN4TE3 | - |
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