Effect of heat treatment of spin-cast solar silicon sheet on crystalline defects
DC Field | Value | Language |
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dc.contributor.author | Kim, Hyunhui | - |
dc.contributor.author | Lee, Jaewoo | - |
dc.contributor.author | Lee, Changbum | - |
dc.contributor.author | Kim, Joonsoo | - |
dc.contributor.author | Jang, Bo-yun | - |
dc.contributor.author | Lee, Jinseok | - |
dc.contributor.author | Yoon, Wooyoung | - |
dc.date.accessioned | 2021-09-06T00:02:06Z | - |
dc.date.available | 2021-09-06T00:02:06Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-07 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102768 | - |
dc.description.abstract | Silicon sheets were fabricated via spin-casting, which is a ribbon manufacturing method for photovoltaics. Although the advantages of spin-casting include rapid processing and mass production with no silicon loss, crystalline defects such as random grain boundaries (CBs), sub-CBs, or dislocations are generated from rapid solidification. These defects are an important factor in the decreased conversion efficiency of solar cells. Spin-cast sheets were annealed at 950 degrees C, 1200 degrees C, and 1350 degrees C for 2 h to eliminate defects and to increase the grain size. The effect of thermal processing on the sheets was analyzed by comparing them with as-cast sheets and investigated by electron backscattered diffraction, photoluminescence, and etch-pit density. It was confirmed that sub-CBs were almost completely assimilated with neighboring grains with the 1350 degrees C heat treatment. Suppression of dislocations was observed through the decrease in the D-band peak with low-temperature photoluminescence (PL, 10 K), and few dislocation clusters were observed from the Secco-etched sheet annealed at 1350 degrees C. (C) 2013 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | LOW-COST PHOTOVOLTAICS | - |
dc.subject | POLYCRYSTALLINE SILICON | - |
dc.subject | LASER-CRYSTALLIZATION | - |
dc.subject | GROWTH | - |
dc.subject | CELLS | - |
dc.subject | PERFORMANCE | - |
dc.subject | SUBSTRATE | - |
dc.subject | DENSITY | - |
dc.subject | RIBBONS | - |
dc.subject | FILMS | - |
dc.title | Effect of heat treatment of spin-cast solar silicon sheet on crystalline defects | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Wooyoung | - |
dc.identifier.doi | 10.1016/j.cap.2013.01.015 | - |
dc.identifier.scopusid | 2-s2.0-84890569648 | - |
dc.identifier.wosid | 000323140300016 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.13, pp.S88 - S92 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 13 | - |
dc.citation.startPage | S88 | - |
dc.citation.endPage | S92 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LOW-COST PHOTOVOLTAICS | - |
dc.subject.keywordPlus | POLYCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | LASER-CRYSTALLIZATION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | CELLS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | RIBBONS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | Spin-casting | - |
dc.subject.keywordAuthor | Silicon ribbon | - |
dc.subject.keywordAuthor | Defects | - |
dc.subject.keywordAuthor | Heat treatment | - |
dc.subject.keywordAuthor | Low-temperature photoluminescence | - |
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