Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors

Abstract

The effects of high energy proton irradiation dose on dc performance as well as critical voltage of the drain-voltage step-stress of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated to evaluate the feasibility of AlGaN/GaN HEMTs for space applications, which need to stand a variety of irradiations. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 10(9) to 2 X 10(14) cm(-2). For the dc characteristics, there was only minimal degradation of saturation drain current (I-DSS), transconductance (g(m)), electron mobility, and sheet carrier concentration at doses below 2 x 10(13) cm(-2), while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2 x 10(14) cm(-2). At this same dose condition, increases of 37% in drain breakdown voltage (V-BR) and of 45% in critical voltage (V-cri) were observed. The improvements of drain breakdown voltage and critical voltage were attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose. (C) 2013 American Vacuum Society.