Coherent vertical beaming using Bragg mirrors for high-efficiency GaN light-emitting diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sun-Kyung | - |
dc.contributor.author | Park, Hong-Gyu | - |
dc.date.accessioned | 2021-09-06T00:35:32Z | - |
dc.date.available | 2021-09-06T00:35:32Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-06-17 | - |
dc.identifier.issn | 1094-4087 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102958 | - |
dc.description.abstract | We propose a dielectric Bragg mirror that utilizes coherent coupling with multiple quantum wells (MQWs) to significantly enhance light extraction from GaN light-emitting diode (LED). Full vectorial electromagnetic simulation showed that, under constructive interference conditions, the Bragg mirror consisting of two dielectric (SiO2/TiO2) stacks and a silver layer led to >30% enhancement in light extraction, as compared to a single silver mirror. Such significant enhancement by a pre-designed Bragg/metal mirror was ascribed to the vertically oriented radiation pattern and reduced plasmonic metal loss. In addition, the gap distance between the MQWs and a Bragg mirror at which the constructive interference takes place could be controlled by modulating the thickness of the first low-refractive-index layer. Moreover, a two-dimensional periodic pattern was incorporated into an upper GaN layer with the designed Bragg mirror and it was shown that a lattice constant of similar to 800 nm was optimal for light extraction. We believe that tailoring the radiation profile of light emitters by coherent coupling with designed high-reflectivity mirrors will be a promising route to overcome the efficiency limit of current semiconductor LED devices. (C)2013 Optical Society of America | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | OPTICAL SOC AMER | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | REFLECTOR | - |
dc.title | Coherent vertical beaming using Bragg mirrors for high-efficiency GaN light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Hong-Gyu | - |
dc.identifier.doi | 10.1364/OE.21.014566 | - |
dc.identifier.scopusid | 2-s2.0-84879394995 | - |
dc.identifier.wosid | 000320510300067 | - |
dc.identifier.bibliographicCitation | OPTICS EXPRESS, v.21, no.12, pp.14566 - 14572 | - |
dc.relation.isPartOf | OPTICS EXPRESS | - |
dc.citation.title | OPTICS EXPRESS | - |
dc.citation.volume | 21 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 14566 | - |
dc.citation.endPage | 14572 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | REFLECTOR | - |
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