High-Performance Amorphous Indium Oxide Thin-Film Transistors Fabricated by an Aqueous Solution Process at Low Temperature

Abstract

This paper presents low temperature solution-processed fabrication techniques for modern thin-film transistors (TFTs). We have investigated the electrical performance of aqueous solution-processed amorphous indium oxide (a-In2O3) TFTs prepared using different annealing temperatures. Even though the a-In2O3 TFTs were annealed at 200 degrees C, electrical characteristics of aqueous solution-processed a-In2O3 TFTs were obtained. High performance such as a saturation mobility of 8.6 cm(2) V-1 s(-1) and an on/off current ratio of over 10(6) was exhibited by a-In2O3 TFTs annealed at 250 degrees C. (c) The Japan Society of Applied Physics