Insertion of nanocrystalline diamond film and the addition of hydrogen gas during deposition for adhesion improvement of cubic boron nitride thin film deposited by unbalanced magnetron sputtering method
DC Field | Value | Language |
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dc.contributor.author | Ko, J. -S. | - |
dc.contributor.author | Park, J. -K. | - |
dc.contributor.author | Lee, W. -S. | - |
dc.contributor.author | Huh, J. -Y. | - |
dc.contributor.author | Baik, Y. -J. | - |
dc.date.accessioned | 2021-09-06T01:42:16Z | - |
dc.date.available | 2021-09-06T01:42:16Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-05-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/103263 | - |
dc.description.abstract | Cubic boron nitride (c-BN) thick film growth was attempted by the addition of hydrogen for residual stress reduction and by using a nanocrystalline diamond (NCD) buffer layer for stabilizing the turbostratic boron nitride interfacial layer. The c-BN films were deposited by the unbalanced magnetron sputtering method. Thin (100 mu m) Si strips (3 x 40 mm(2)) were used as substrates. A boron nitride target was used, which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing of -40 V. The deposition pressure was 0.27 Pa with a flow of Ar (18 sccm)-N-2 (2 sccm) mixed gas. Hydrogen gas of 2 sccm was added to the Ar-N-2 mixed gas. The effect of the addition time of the hydrogen to the Ar-N-2 gas during deposition was investigated and found to be critical to the occurrence of the delamination of the c-BN film on the NCD buffer layer. As the addition of the hydrogen was delayed, the delamination started later. C-BN film of 3 mu m thickness adherent to the substrate was obtained. (C) 2013 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | RESIDUAL-STRESS | - |
dc.title | Insertion of nanocrystalline diamond film and the addition of hydrogen gas during deposition for adhesion improvement of cubic boron nitride thin film deposited by unbalanced magnetron sputtering method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Huh, J. -Y. | - |
dc.identifier.doi | 10.1016/j.tsf.2013.02.058 | - |
dc.identifier.scopusid | 2-s2.0-84876678538 | - |
dc.identifier.wosid | 000317736700064 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.534, pp.380 - 383 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 534 | - |
dc.citation.startPage | 380 | - |
dc.citation.endPage | 383 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | RESIDUAL-STRESS | - |
dc.subject.keywordAuthor | Cubic boron nitride | - |
dc.subject.keywordAuthor | Hydrogen addition | - |
dc.subject.keywordAuthor | Nanocrystalline diamond buffer | - |
dc.subject.keywordAuthor | Unbalanced magnetron sputtering | - |
dc.subject.keywordAuthor | Residual stress reduction | - |
dc.subject.keywordAuthor | Delamination | - |
dc.subject.keywordAuthor | Interfacial layer | - |
dc.subject.keywordAuthor | Adherent thick film | - |
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