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Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Xi, Yuyin | - |
| dc.contributor.author | Liu, Lu | - |
| dc.contributor.author | Hwang, Ya-Hsi | - |
| dc.contributor.author | Phillips, Oluwadamilola | - |
| dc.contributor.author | Ren, Fan | - |
| dc.contributor.author | Pearton, Stephen J. | - |
| dc.contributor.author | Kim, Jihyun | - |
| dc.contributor.author | Hsu, Chien-Hsing | - |
| dc.contributor.author | Lo, Chien-Fong | - |
| dc.contributor.author | Johnson, Jerry Wayne | - |
| dc.date.accessioned | 2021-09-06T02:15:01Z | - |
| dc.date.available | 2021-09-06T02:15:01Z | - |
| dc.date.created | 2021-06-18 | - |
| dc.date.issued | 2013-05 | - |
| dc.identifier.issn | 1071-1023 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/103437 | - |
| dc.description.abstract | The hydrogen detection response time of Pt-gated diode sensors fabricated on AlGaN/GaN heterostructure as a function of the hydrogen concentration was investigated. A new method to extract the response time, taking the derivative of diode current, was proposed and shown to reduce the response time of detecting 1% hydrogen by about 60% as compared to the response time defined as the diode current reaching 90% of its total changes, t(90). Hydrogen-sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 17.7 kJ/mole for the sensing process. (C) 2013 American Vacuum Society. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | A V S AMER INST PHYSICS | - |
| dc.title | Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
| dc.identifier.doi | 10.1116/1.4798612 | - |
| dc.identifier.scopusid | 2-s2.0-84878366033 | - |
| dc.identifier.wosid | 000320130500065 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.31, no.3 | - |
| dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
| dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
| dc.citation.volume | 31 | - |
| dc.citation.number | 3 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
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