Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopy
DC Field | Value | Language |
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dc.contributor.author | Kim, Hong-Yeol | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Freitas, Jaime A., Jr. | - |
dc.date.accessioned | 2021-09-06T02:43:40Z | - |
dc.date.available | 2021-09-06T02:43:40Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-04-01 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/103532 | - |
dc.description.abstract | 4H-SiC samples irradiated with high energy protons were probed by low temperature photoluminescence (PL) and room temperature micro-Raman scattering spectroscopies. The quench of the near band-edge emission and the presence of a number of new sharp lines in the luminescence spectra of the proton-irradiated samples confirm the formation of various new defects. The changes of the line-shape and peak position of the longitudinal optical phonon-plasmon coupled (LOPC) mode in 4H-SiC are consistent with the decrease in the free carrier concentrations due to the introduction of carrier traps induced by the high energy proton irradiation. The estimated penetration depths for 6 and 8 MeV energy proton were 180 mu m and 300 mu m, respectively, which are in good agreement with the Monte Carlo numerical simulation results. At the 180 mu m and 300 mu m depths, the carrier concentrations were reduced by approximately 34% and 21%, respectively. (c) 2012 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | PHOTOLUMINESCENCE SPECTROSCOPY | - |
dc.subject | SILICON-CARBIDE | - |
dc.subject | N-GAN | - |
dc.subject | ELECTRON | - |
dc.subject | DEFECTS | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | RADIATION | - |
dc.subject | SCATTERING | - |
dc.subject | DAMAGE | - |
dc.subject | 4H | - |
dc.title | Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1016/j.apsusc.2012.12.014 | - |
dc.identifier.scopusid | 2-s2.0-84875221522 | - |
dc.identifier.wosid | 000316790200007 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.270, pp.44 - 48 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 270 | - |
dc.citation.startPage | 44 | - |
dc.citation.endPage | 48 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE SPECTROSCOPY | - |
dc.subject.keywordPlus | SILICON-CARBIDE | - |
dc.subject.keywordPlus | N-GAN | - |
dc.subject.keywordPlus | ELECTRON | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | RADIATION | - |
dc.subject.keywordPlus | SCATTERING | - |
dc.subject.keywordPlus | DAMAGE | - |
dc.subject.keywordPlus | 4H | - |
dc.subject.keywordAuthor | 4H-SiC | - |
dc.subject.keywordAuthor | Proton irradiation | - |
dc.subject.keywordAuthor | Raman spectroscopy | - |
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