Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Youn Ho | - |
| dc.contributor.author | Shin, Sang-Hoon | - |
| dc.contributor.author | Song, Jin Dong | - |
| dc.contributor.author | Chang, Joonyeon | - |
| dc.contributor.author | Han, Suk Hee | - |
| dc.contributor.author | Choi, Heon-Jin | - |
| dc.contributor.author | Koo, Hyun Cheol | - |
| dc.date.accessioned | 2021-09-06T03:10:09Z | - |
| dc.date.available | 2021-09-06T03:10:09Z | - |
| dc.date.created | 2021-06-14 | - |
| dc.date.issued | 2013-04 | - |
| dc.identifier.issn | 0038-1101 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/103661 | - |
| dc.description.abstract | The gate voltage dependence of the Rashba effect in a p-type quantum well was investigated by using Shubnikov-de Haas measurements. The GaSb-based p-type quantum well has a large Rashba spin-orbit interaction parameter of 1.71 x 10(-11) eVm for a zero gate voltage and exhibits gate controllability. We also propose a complementary logic device using n- and p-type spin transistors that simultaneously utilize charge and spin currents to improve the signal margin. (C) 2013 Elsevier Ltd. All rights reserved. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
| dc.subject | 2-DIMENSIONAL ELECTRON-GAS | - |
| dc.subject | EFFECTIVE-MASS | - |
| dc.subject | SPIN | - |
| dc.subject | FIELD | - |
| dc.title | Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Koo, Hyun Cheol | - |
| dc.identifier.doi | 10.1016/j.sse.2013.01.016 | - |
| dc.identifier.scopusid | 2-s2.0-84874674025 | - |
| dc.identifier.wosid | 000317701500008 | - |
| dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.82, pp.34 - 37 | - |
| dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
| dc.citation.title | SOLID-STATE ELECTRONICS | - |
| dc.citation.volume | 82 | - |
| dc.citation.startPage | 34 | - |
| dc.citation.endPage | 37 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | 2-DIMENSIONAL ELECTRON-GAS | - |
| dc.subject.keywordPlus | EFFECTIVE-MASS | - |
| dc.subject.keywordPlus | SPIN | - |
| dc.subject.keywordPlus | FIELD | - |
| dc.subject.keywordAuthor | Rashba effect | - |
| dc.subject.keywordAuthor | GaSb p-type quantum well | - |
| dc.subject.keywordAuthor | Complementary device | - |
| dc.subject.keywordAuthor | Spin transistor | - |
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.