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Electrical Properties of Amorphous BaTi4O9 Films Grown on Cu/Ti/SiO2/Si Substrates Using RF Magnetron Sputtering

Authors
Kim, Jin-SeongKang, Min-GyuKweon, Sang-HyoHan, GuifangKang, Chong-YunYun, Jung-RakJeong, Young-HunPaik, Jong-HooNahm, Sahn
Issue Date
4월-2013
Publisher
WILEY
Citation
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.96, no.4, pp.1248 - 1252
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Volume
96
Number
4
Start Page
1248
End Page
1252
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/103693
DOI
10.1111/jace.12201
ISSN
0002-7820
Abstract
Amorphous BaTi4O9 (BT4) films for use as capacitors embedded in PCB substrates were grown on Cu electrodes at low temperatures ( 200 degrees C). The dielectric constant (k) of the amorphous BT4 film grown at room temperature (RT) was 38, and its dissipation factor was 3.2% at 100kHz. A similar k value was obtained at radio-frequency ranges, with a quality factor of 143 at 1.0GHz. The films showed a capacitance density of 200nF/cm2, a temperature coefficient of capacitance of 296ppm/degrees C at 75kHz, and a breakdown voltage of 42.5V. This film therefore satisfies the requirements of the International Technology Roadmap for Semiconductors for 2016 for capacitors grown on organic substrates. In addition, the leakage current mechanism of the amorphous BT4 films was found to be Schottky emission, and the Schottky barrier height was calculated as 2.26eV.
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