Organic Light-Emitting Field-Effect Transistors Based upon Pentacene and Perylene
- Authors
- Seo, Hoon-Seok; Kim, Dae-Kyu; Oh, Jeong-Do; Shin, Eun-Sol; Choi, Jong-Ho
- Issue Date
- 7-3월-2013
- Publisher
- AMER CHEMICAL SOC
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY C, v.117, no.9, pp.4764 - 4770
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICAL CHEMISTRY C
- Volume
- 117
- Number
- 9
- Start Page
- 4764
- End Page
- 4770
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/103748
- DOI
- 10.1021/jp311816t
- ISSN
- 1932-7447
- Abstract
- Air-stable, ambipolar heterojunction-based organic light-emitting field-effect transistors (OLEFETs) with a top-contact, multidigitated, long-channel geometry were produced, and the current-voltage-light emission (I-V-L) characteristics were systematically examined. Two active layers of p-type pentacene and n-type N,N'-ditridecylperylene-3,4,9,10-tetra carboxylic diimide (P13) as well as a protecting layer of 2,S-bis(4-biphenyl) thiophene (BP1T) were successively deposited using the neutral cluster beam deposition method. On the basis of the growth of high-quality, well-packed crystalline thin films, the OLEFETs demonstrated good field-effect characteristics, well-balanced ambipolarity, operational stability, and electroluminescence (EL) under ambient conditions. The operating conduction and EL mechanisms responsible for the observed recombination zone are discussed with the aid of light-emission images obtained using a charge-coupled device.
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