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Simulation of the CMS Resistive Plate Chambers

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dc.contributor.authorHadjiiska, R.-
dc.contributor.authorLitov, L.-
dc.contributor.authorPavlov, B.-
dc.contributor.authorPetkov, P.-
dc.contributor.authorDimitrov, A.-
dc.contributor.authorBeernaert, K.-
dc.contributor.authorCimmino, A.-
dc.contributor.authorCostantini, S.-
dc.contributor.authorGarcia, G.-
dc.contributor.authorLellouch, J.-
dc.contributor.authorMarinov, A.-
dc.contributor.authorOcampo, A.-
dc.contributor.authorStrobbe, N.-
dc.contributor.authorThyssen, F.-
dc.contributor.authorTytgat, M.-
dc.contributor.authorVerwilligen, P.-
dc.contributor.authorYazgan, E.-
dc.contributor.authorZaganidis, N.-
dc.contributor.authorAleksandrov, A.-
dc.contributor.authorGenchev, V.-
dc.contributor.authorIaydjiev, P.-
dc.contributor.authorRodozov, M.-
dc.contributor.authorShopova, M.-
dc.contributor.authorSultanov, G.-
dc.contributor.authorBan, Y.-
dc.contributor.authorCai, J.-
dc.contributor.authorXue, Z.-
dc.contributor.authorGe, Y.-
dc.contributor.authorLi, Q.-
dc.contributor.authorQian, S.-
dc.contributor.authorAvila, C.-
dc.contributor.authorChaparro, L. F.-
dc.contributor.authorGomez, J. P.-
dc.contributor.authorGomez Moreno, B.-
dc.contributor.authorOsorio Oliveros, A. F.-
dc.contributor.authorSanabria, J. C.-
dc.contributor.authorAssran, Y.-
dc.contributor.authorSharma, A.-
dc.contributor.authorAbbrescia, M.-
dc.contributor.authorColaleo, A.-
dc.contributor.authorPugliese, G.-
dc.contributor.authorLoddo, F.-
dc.contributor.authorCalabria, C.-
dc.contributor.authorMaggi, M.-
dc.contributor.authorBenussi, L.-
dc.contributor.authorBianco, S.-
dc.contributor.authorColafranceschi, S.-
dc.contributor.authorPiccolo, D.-
dc.contributor.authorCarrillo, C.-
dc.contributor.authorIorio, O.-
dc.contributor.authorBuontempo, S.-
dc.contributor.authorPaolucci, P.-
dc.contributor.authorVitulo, P.-
dc.contributor.authorBerzano, U.-
dc.contributor.authorGabusi, M.-
dc.contributor.authorKang, M.-
dc.contributor.authorLee, K. S.-
dc.contributor.authorPark, S. K.-
dc.contributor.authorShin, S.-
dc.contributor.authorKim, M. S.-
dc.contributor.authorSeo, H.-
dc.contributor.authorGoh, J.-
dc.contributor.authorChoi, Y.-
dc.contributor.authorShoaib, M.-
dc.date.accessioned2021-09-06T04:00:42Z-
dc.date.available2021-09-06T04:00:42Z-
dc.date.created2021-06-14-
dc.date.issued2013-03-
dc.identifier.issn1748-0221-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/103878-
dc.description.abstractThe Resistive Plate Chamber (RPC) muon subsystem contributes significantly to the formation of the trigger decision and reconstruction of the muon trajectory parameters. Simulation of the RPC response is a crucial part of the entire CMS Monte Carlo software and directly influences the final physical results. An algorithm based on the parametrization of RPC efficiency, noise, cluster size and timing for every strip has been developed. Experimental data obtained from cosmic and proton-proton collisions at root s = 7 TeV have been used for determination of the parameters. A dedicated validation procedure has been developed. A good agreement between the simulated and experimental data has been achieved.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIOP PUBLISHING LTD-
dc.subjectMODE-
dc.titleSimulation of the CMS Resistive Plate Chambers-
dc.typeArticle-
dc.contributor.affiliatedAuthorPark, S. K.-
dc.identifier.doi10.1088/1748-0221/8/03/P03001-
dc.identifier.scopusid2-s2.0-84875546758-
dc.identifier.wosid000316990700026-
dc.identifier.bibliographicCitationJOURNAL OF INSTRUMENTATION, v.8-
dc.relation.isPartOfJOURNAL OF INSTRUMENTATION-
dc.citation.titleJOURNAL OF INSTRUMENTATION-
dc.citation.volume8-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaInstruments & Instrumentation-
dc.relation.journalWebOfScienceCategoryInstruments & Instrumentation-
dc.subject.keywordPlusMODE-
dc.subject.keywordAuthorResistive-plate chambers-
dc.subject.keywordAuthorSimulation methods and programs-
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