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Role of Alumina Buffer Layer on the Dielectric and Piezoelectric Properties of PZT System Thick Films

Authors
Shin, Tae HeeHa, Jong-YoonSong, Hyun CheolYoon, Seok-JinHwang, Seong-JuNahm, SahnPark, Hyung-HoChoi, Ji-Won
Issue Date
2월-2013
Publisher
WILEY
Citation
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.96, no.2, pp.491 - 495
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Volume
96
Number
2
Start Page
491
End Page
495
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/104062
DOI
10.1111/jace.12052
ISSN
0002-7820
Abstract
Piezoelectric properties of screen-printed thick films, 0.01Pb(Mg1/2W1/2)O30.41Pb(Ni1/3Nb2/3)O30.35PbTiO30.23PbZrO3+ 0.1wt% Y2O3+1.5wt% ZnO (PMWPNNPTPZ+YZ) on alumina (Al2O3) buffer layers deposited on Si substrates, were studied. To improve piezoelectric properties of and integrate the PMWPNNPTPZ+YZ thick films, the Al2O3 buffer layers on silicon (Si) substrates were used. The Al2O3 buffer layer on the Si substrate suppressed the pyrochlore phases of the piezoelectric thick films and prevented interdiffusion of Si and Pb. The PMWPNNPTPZ+YZ thick films with 900nm thick Al2O3 buffer layer showed piezoelectric properties such as Pr=32C/cm2, Ec=25kV/cm, and d33=32pC/N. These significant piezoelectric properties of our screen-printed PMWPNNPTPZ+YZ thick films by the Al2O3 buffer layers can be applied to functional thick film in many micro-electromechanical system (MEMS) applications such as micro actuators and sensors.
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