Nonvolatile Memory Devices Prepared from Sol-Gel Derived Niobium Pentoxide Films
DC Field | Value | Language |
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dc.contributor.author | Baek, Hyunhee | - |
dc.contributor.author | Lee, Chanwoo | - |
dc.contributor.author | Choi, Jungkyu | - |
dc.contributor.author | Cho, Jinhan | - |
dc.date.accessioned | 2021-09-06T05:23:19Z | - |
dc.date.available | 2021-09-06T05:23:19Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-01-08 | - |
dc.identifier.issn | 0743-7463 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/104217 | - |
dc.description.abstract | We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb2O5) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb2O5, was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 degrees C to form a Nb2O5 film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb2O5 films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as "electroforming", a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 +/- 0.05 V-RESET and 1.03 +/- 0.06 V-SET) with a high ON/OFF current ratio above 10(8). The reported approach offers opportunities for preparing Nb2O5-based resistive switching memory devices from solution process. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | TIO2 THIN-FILMS | - |
dc.subject | TRANSITION-METAL OXIDES | - |
dc.subject | ATOMIC-LAYER DEPOSITION | - |
dc.subject | SWITCHING PROPERTIES | - |
dc.subject | RESISTIVE MEMORY | - |
dc.subject | RESISTANCE | - |
dc.subject | MULTILAYERS | - |
dc.subject | MECHANISM | - |
dc.title | Nonvolatile Memory Devices Prepared from Sol-Gel Derived Niobium Pentoxide Films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jungkyu | - |
dc.contributor.affiliatedAuthor | Cho, Jinhan | - |
dc.identifier.doi | 10.1021/la303857b | - |
dc.identifier.scopusid | 2-s2.0-84872120248 | - |
dc.identifier.wosid | 000313305900045 | - |
dc.identifier.bibliographicCitation | LANGMUIR, v.29, no.1, pp.380 - 386 | - |
dc.relation.isPartOf | LANGMUIR | - |
dc.citation.title | LANGMUIR | - |
dc.citation.volume | 29 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 380 | - |
dc.citation.endPage | 386 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | TIO2 THIN-FILMS | - |
dc.subject.keywordPlus | TRANSITION-METAL OXIDES | - |
dc.subject.keywordPlus | ATOMIC-LAYER DEPOSITION | - |
dc.subject.keywordPlus | SWITCHING PROPERTIES | - |
dc.subject.keywordPlus | RESISTIVE MEMORY | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | MULTILAYERS | - |
dc.subject.keywordPlus | MECHANISM | - |
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