Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects

Abstract

We grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe-Al2O3 thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system gives rise to a broad range of nanotube diameters, with no preferential selectivity of semiconducting tubes, but with at least 1/3 of metallic tubes. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000061].