다결정 실리콘 웨이퍼 직접제조에 대한 공정변수 영향
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 위성민 | - |
dc.contributor.author | 이진석 | - |
dc.contributor.author | 장보윤 | - |
dc.contributor.author | 김준수 | - |
dc.contributor.author | 안영수 | - |
dc.contributor.author | 윤우영 | - |
dc.date.accessioned | 2021-09-06T07:39:31Z | - |
dc.date.available | 2021-09-06T07:39:31Z | - |
dc.date.created | 2021-06-17 | - |
dc.date.issued | 2013 | - |
dc.identifier.issn | 1598-706X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/105088 | - |
dc.description.abstract | A ribbon-type polycrystalline silicon wafer was directly fabricated from liquid silicon via a novel technique for both a fast growth rate and large grain size by exploiting gas pressure. Effects of processing parameters such as moving speed of a dummy bar and the length of the solidification zone on continuous casting of the silicon wafer were investigated. Silicon melt extruded from the growth region in the case of a solidification zone with a length of 1cm due to incomplete solidification. In case of a solidification zone wieh a length of 2 cm, on the other hand, continuous casting of the wafer was impossible due to the volume expansion of silicon derived from the liquid-solid transformation in solidification zone. Consequently, the optimal length of the solidification zone was 1.5 cm for maintaining the position of the solid-liquid interface in the solidification zone. The silicon wafer could be continuously casted when the moving speed of the dummy bar was 6 cm/min, but liquid silicon extruded from the growth region without solidification when the moving speed of the dummy bar was ≥ 9 cm/min. This was due to a shift of the position of the solid-liquid interface from the solidification zone to the moving area. The present study reports experimental findings on a new direct growth system for obtaining silicon wafers with both high quality and productivity, as a candidate for an alternate route for the fabrication of ribbon-type silicon wafers. | - |
dc.language | Korean | - |
dc.language.iso | ko | - |
dc.publisher | 한국주조공학회 | - |
dc.title | 다결정 실리콘 웨이퍼 직접제조에 대한 공정변수 영향 | - |
dc.title.alternative | Effect of Processing Parameters on Direct Fabrication of Polycrystalline Silicon Wafer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 윤우영 | - |
dc.identifier.doi | 10.7777/jkfs.2013.33.4.161 | - |
dc.identifier.bibliographicCitation | 한국주조공학회지, v.33, no.4, pp.157 - 161 | - |
dc.relation.isPartOf | 한국주조공학회지 | - |
dc.citation.title | 한국주조공학회지 | - |
dc.citation.volume | 33 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 157 | - |
dc.citation.endPage | 161 | - |
dc.type.rims | ART | - |
dc.identifier.kciid | ART001799193 | - |
dc.description.journalClass | 2 | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordAuthor | Solar cell | - |
dc.subject.keywordAuthor | Silicon | - |
dc.subject.keywordAuthor | Wafer | - |
dc.subject.keywordAuthor | Solidification | - |
dc.subject.keywordAuthor | Interface | - |
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