Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-facen-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers
DC Field | Value | Language |
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dc.contributor.author | Jeon, Joon-Woo | - |
dc.contributor.author | Yum, Woong-Sun | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.contributor.author | Lee, Sang Youl | - |
dc.contributor.author | Song, June-O | - |
dc.date.accessioned | 2021-09-06T08:16:48Z | - |
dc.date.available | 2021-09-06T08:16:48Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/105323 | - |
dc.description.abstract | The authors report on the formation of highly reliable Ti/Al-based ohmic contacts to N-face n-GaN for high-performance vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers. The Ti(Ga) solid solution layer is used to minimize the outdiffusion of Ga atoms from the n-GaN surface region. Unlike the Ti/Al contacts, the Ti(Ga)/Ti/Al and Ti(Ga)/TiN/Al samples exhibit ohmic behavior with contact resistivities of 3.9 - 4.8 x 10(-4) Omega cm(2) after annealing at 250 degrees C. It was further shown that unlike the Ti(Ga)/TiN/Al samples, the Ti/Al and the Ti(Ga)/Ti/Al samples are largely electrically degraded when annealed at 300 degrees C in an oven. Based on x-ray photoemission spectroscopy and secondary ion mass spectrometry results, ohmic formation and degradation mechanisms are briefly described and discussed. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3678490] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | CRYSTAL-POLARITY | - |
dc.subject | P-GAN | - |
dc.title | Low resistance and thermally stable Ti/Al-based Ohmic contacts to N-facen-GaN for vertical light-emitting diodes by using Ti(Ga) solid solution and TiN layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1116/1.3678490 | - |
dc.identifier.wosid | 000302219500034 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.30, no.2 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 30 | - |
dc.citation.number | 2 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CRYSTAL-POLARITY | - |
dc.subject.keywordPlus | P-GAN | - |
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