Large-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device Application
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, TaeYoung | - |
dc.contributor.author | Kirn, Hyeongkeun | - |
dc.contributor.author | Kwon, Soon Woo | - |
dc.contributor.author | Kim, Yena | - |
dc.contributor.author | Park, Won Kyu | - |
dc.contributor.author | Yoon, Dae Ho | - |
dc.contributor.author | Jang, A-Rang | - |
dc.contributor.author | Shin, Hyeon Suk | - |
dc.contributor.author | Suh, Kwang S. | - |
dc.contributor.author | Yang, Woo Seok | - |
dc.date.accessioned | 2021-09-06T10:34:09Z | - |
dc.date.available | 2021-09-06T10:34:09Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2012-02 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/106164 | - |
dc.description.abstract | We report on a method for the large-scale production of graphene micropatterns by a self-assembly mediated process. The evaporation-induced self-assembly technique was engineered to produce highly ordered graphene patterns on flexible substrates in a simplified and scalable manner. The crossed stripe graphene patterns have been produced over a large area with regions consisting of single- and two-layer graphene. Based on these graphene patterns, flexible graphene-based field effect transistors have been fabricated with an ion-gel gate dielectric, which operates at low voltages of < 2 V with a hole and electron mobility of 214 and 106 cm(2)/V.s, respectively. The self-assembly approach described here may pave the way for the nonlithographic production of graphene patterns, which is scalable to large areas and compatible with roll-to-roll system. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | GEL GATE DIELECTRICS | - |
dc.subject | CONTROLLED EVAPORATION | - |
dc.subject | RAMAN-SPECTROSCOPY | - |
dc.subject | LOW-VOLTAGE | - |
dc.subject | LAYER | - |
dc.subject | FILMS | - |
dc.subject | FLOW | - |
dc.subject | GAS | - |
dc.title | Large-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device Application | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Suh, Kwang S. | - |
dc.identifier.doi | 10.1021/nl203691d | - |
dc.identifier.scopusid | 2-s2.0-84856954442 | - |
dc.identifier.wosid | 000299967800036 | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.12, no.2, pp.743 - 748 | - |
dc.relation.isPartOf | NANO LETTERS | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 743 | - |
dc.citation.endPage | 748 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | GEL GATE DIELECTRICS | - |
dc.subject.keywordPlus | CONTROLLED EVAPORATION | - |
dc.subject.keywordPlus | RAMAN-SPECTROSCOPY | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | FLOW | - |
dc.subject.keywordPlus | GAS | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | self-assembly | - |
dc.subject.keywordAuthor | patterning | - |
dc.subject.keywordAuthor | large-area | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | field effect transistor | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.