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Large-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device Application

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dc.contributor.authorKim, TaeYoung-
dc.contributor.authorKirn, Hyeongkeun-
dc.contributor.authorKwon, Soon Woo-
dc.contributor.authorKim, Yena-
dc.contributor.authorPark, Won Kyu-
dc.contributor.authorYoon, Dae Ho-
dc.contributor.authorJang, A-Rang-
dc.contributor.authorShin, Hyeon Suk-
dc.contributor.authorSuh, Kwang S.-
dc.contributor.authorYang, Woo Seok-
dc.date.accessioned2021-09-06T10:34:09Z-
dc.date.available2021-09-06T10:34:09Z-
dc.date.created2021-06-19-
dc.date.issued2012-02-
dc.identifier.issn1530-6984-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/106164-
dc.description.abstractWe report on a method for the large-scale production of graphene micropatterns by a self-assembly mediated process. The evaporation-induced self-assembly technique was engineered to produce highly ordered graphene patterns on flexible substrates in a simplified and scalable manner. The crossed stripe graphene patterns have been produced over a large area with regions consisting of single- and two-layer graphene. Based on these graphene patterns, flexible graphene-based field effect transistors have been fabricated with an ion-gel gate dielectric, which operates at low voltages of < 2 V with a hole and electron mobility of 214 and 106 cm(2)/V.s, respectively. The self-assembly approach described here may pave the way for the nonlithographic production of graphene patterns, which is scalable to large areas and compatible with roll-to-roll system.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER CHEMICAL SOC-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectGEL GATE DIELECTRICS-
dc.subjectCONTROLLED EVAPORATION-
dc.subjectRAMAN-SPECTROSCOPY-
dc.subjectLOW-VOLTAGE-
dc.subjectLAYER-
dc.subjectFILMS-
dc.subjectFLOW-
dc.subjectGAS-
dc.titleLarge-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device Application-
dc.typeArticle-
dc.contributor.affiliatedAuthorSuh, Kwang S.-
dc.identifier.doi10.1021/nl203691d-
dc.identifier.scopusid2-s2.0-84856954442-
dc.identifier.wosid000299967800036-
dc.identifier.bibliographicCitationNANO LETTERS, v.12, no.2, pp.743 - 748-
dc.relation.isPartOfNANO LETTERS-
dc.citation.titleNANO LETTERS-
dc.citation.volume12-
dc.citation.number2-
dc.citation.startPage743-
dc.citation.endPage748-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusGEL GATE DIELECTRICS-
dc.subject.keywordPlusCONTROLLED EVAPORATION-
dc.subject.keywordPlusRAMAN-SPECTROSCOPY-
dc.subject.keywordPlusLOW-VOLTAGE-
dc.subject.keywordPlusLAYER-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusFLOW-
dc.subject.keywordPlusGAS-
dc.subject.keywordAuthorGraphene-
dc.subject.keywordAuthorself-assembly-
dc.subject.keywordAuthorpatterning-
dc.subject.keywordAuthorlarge-area-
dc.subject.keywordAuthorflexible electronics-
dc.subject.keywordAuthorfield effect transistor-
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