Radiation effects in GaN materials and devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Polyakov, Alexander Y. | - |
dc.contributor.author | Pearton, S. J. | - |
dc.contributor.author | Frenzer, Patrick | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Liu, Lu | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-06T11:32:50Z | - |
dc.date.available | 2021-09-06T11:32:50Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/106534 | - |
dc.description.abstract | This article reviews the effects of radiation damage on GaN materials and devices such as light-emitting diodes and high electron mobility transistors. Protons, electrons and gamma rays typically produce point defects in GaN, in contrast to neutron damage which is dominated by more extended disordered regions. Regardless of the type of radiation, the electrical conductivity of the GaN is reduced through the introduction of trap states with thermal ionization energies deep in the forbidden bandgap. An important practical parameter is the carrier removal rate for each type of radiation since this determines the dose at which device degradation will occur. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e. it can withstand radiation doses of at least two orders of magnitude higher than those degrading GaAs with a similar doping level. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n- and p-type GaN and interaction of radiation defects with Mg acceptors and the poor understanding of interaction of radiation defects in doped nitrides with the dislocations always present. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | ELECTRON-MOBILITY TRANSISTORS | - |
dc.subject | N-TYPE GAN | - |
dc.subject | DEEP-LEVEL | - |
dc.subject | PROTON-IRRADIATION | - |
dc.subject | RECOMBINATION PROPERTIES | - |
dc.subject | TRANSPORT-PROPERTIES | - |
dc.subject | YELLOW LUMINESCENCE | - |
dc.subject | POWER PERFORMANCE | - |
dc.subject | SCHOTTKY-BARRIER | - |
dc.subject | ALGAN/GAN HEMTS | - |
dc.title | Radiation effects in GaN materials and devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1039/c2tc00039c | - |
dc.identifier.scopusid | 2-s2.0-84875762957 | - |
dc.identifier.wosid | 000314803600001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.1, no.5, pp.877 - 887 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 1 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 877 | - |
dc.citation.endPage | 887 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRON-MOBILITY TRANSISTORS | - |
dc.subject.keywordPlus | N-TYPE GAN | - |
dc.subject.keywordPlus | DEEP-LEVEL | - |
dc.subject.keywordPlus | PROTON-IRRADIATION | - |
dc.subject.keywordPlus | RECOMBINATION PROPERTIES | - |
dc.subject.keywordPlus | TRANSPORT-PROPERTIES | - |
dc.subject.keywordPlus | YELLOW LUMINESCENCE | - |
dc.subject.keywordPlus | POWER PERFORMANCE | - |
dc.subject.keywordPlus | SCHOTTKY-BARRIER | - |
dc.subject.keywordPlus | ALGAN/GAN HEMTS | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.