pi-Conjugated organic-based devices with different layered structures produced by the neutral cluster beam deposition method and operating conduction mechanism
- Authors
- Seo, Hoon-Seok; Oh, Jeong-Do; Kim, Dae-Kyu; Shin, Eun-Sol; Choi, Jong-Ho
- Issue Date
- 19-12월-2012
- Publisher
- IOP PUBLISHING LTD
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.45, no.50
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Volume
- 45
- Number
- 50
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/106649
- DOI
- 10.1088/0022-3727/45/50/505108
- ISSN
- 0022-3727
- Abstract
- The authors report on the systematic characterization of structural effects of organic complementary inverters based on two pi-conjugated organic molecules, pentacene and copper hexadecafluorophthalocyanine (F16CuPc). Three classes of inverters with different layered structures in top-contact configuration were produced using the neutral cluster beam deposition method. Their voltage transfer characteristics, gain curves and hysteresis behaviour were characterized with respect to their thickness. Class I inverters, with generic structures of single-layered, p- and n-type (200/180 angstrom) transistors, exhibited high gains of 12.8 +/- 1.0 with sharp inversions. Their two constituent transistors, with hole and electron mobilities of 0.38 cm(2) V-1 s(-1) and 7.0 x 10(-3) cm(2) V-1 s(-1), respectively, showed well-coupled carrier conduction during operation. The behaviour of class II and III inverters, with layered heterojunction structures, was independent of upper-layer thickness and did not show hysteresis. The better performances of class II inverters, which showed high gains of 14.4 +/- 1.1, were rationalized partly in terms of decreased mobility differences between their constituent transistors. Heterojunction geometries can be applied to obtain high-performance, fast-switching inverters by avoiding direct exposure of the air-sensitive transistors to ambient conditions. The inverters' general operating conduction mechanism is also discussed.
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