Improved Light Output Power of GaN-Based Flip-Chip Light-Emitting Diode Through SiO2 Cones
DC Field | Value | Language |
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dc.contributor.author | Jung, Se-Yeon | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-06T12:29:06Z | - |
dc.date.available | 2021-09-06T12:29:06Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2012-12 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/106774 | - |
dc.description.abstract | We formed SiO2 cones on p-type GaN by using a simple wet-etching process and investigated the effects of the size and the coverage of the SiO2 cones on the output power performance of GaN-based light-emitting diodes (LEDs). The diameter of two different size SiO2 cones and the distance between the cones are in a range of 17.3-21.1 mu m and 32.7-33.9 mu m, respectively. The coverage of the SiO2 cones on p-type GaN is measured to be 9.5 - 10.9%. As the SiO2 cone size increases, LEDs exhibit a slightly higher forward-bias voltage (at an injection current of 20 mA) and somewhat higher series resistance. The light output increases with an increase in the size of the cones; the LEDs fabricated with the cones exhibit 5.8-8.4% higher light output power (at 20 mA) than those without the SiO2 cones. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | LOW-RESISTANCE | - |
dc.subject | FABRICATION | - |
dc.subject | EXTRACTION | - |
dc.title | Improved Light Output Power of GaN-Based Flip-Chip Light-Emitting Diode Through SiO2 Cones | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1007/s13391-012-2025-y | - |
dc.identifier.scopusid | 2-s2.0-84871667404 | - |
dc.identifier.wosid | 000312756600002 | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.8, no.6, pp.549 - 552 | - |
dc.relation.isPartOf | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 549 | - |
dc.citation.endPage | 552 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001718102 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.description.journalRegisteredClass | other | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.subject.keywordAuthor | light-emitting diode | - |
dc.subject.keywordAuthor | ohmic reflector | - |
dc.subject.keywordAuthor | Ag | - |
dc.subject.keywordAuthor | silicon dioxide | - |
dc.subject.keywordAuthor | cone | - |
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