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Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Nam, Jungsik | - |
| dc.contributor.author | Kang, Chang Yong | - |
| dc.contributor.author | Kim, Kwang Pyo | - |
| dc.contributor.author | Yeo, Hyeopgoo | - |
| dc.contributor.author | Lee, Boung Jun | - |
| dc.contributor.author | Seo, Sungkyu | - |
| dc.contributor.author | Yang, Ji-Woon | - |
| dc.date.accessioned | 2021-09-06T12:37:05Z | - |
| dc.date.available | 2021-09-06T12:37:05Z | - |
| dc.date.created | 2021-06-14 | - |
| dc.date.issued | 2012-12 | - |
| dc.identifier.issn | 0018-9499 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/106819 | - |
| dc.description.abstract | Effects of gamma-ray irradiation on short-channel effects (SCEs) in low-doped double-gate MOSFETs are experimentally examined for various fin widths and channel lengths. The different behavior of the effects in NMOS and PMOS devices are analyzed using three-dimensional (3-D) TCAD simulation. The physical interpretation for the influence of ionizing radiation on SCEs in low-doped multi-gate MOSFETs is provided. This successfully explains not only the degradation in NMOS, but also the improvement in PMOS for subthreshold characteristics by irradiation. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Seo, Sungkyu | - |
| dc.contributor.affiliatedAuthor | Yang, Ji-Woon | - |
| dc.identifier.doi | 10.1109/TNS.2012.2226751 | - |
| dc.identifier.scopusid | 2-s2.0-85008530766 | - |
| dc.identifier.wosid | 000312486000054 | - |
| dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.59, no.6, pp.3021 - 3026 | - |
| dc.relation.isPartOf | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
| dc.citation.title | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
| dc.citation.volume | 59 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 3021 | - |
| dc.citation.endPage | 3026 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Nuclear Science & Technology | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
| dc.subject.keywordAuthor | Double-gate MOSFETs | - |
| dc.subject.keywordAuthor | ionizing radiation | - |
| dc.subject.keywordAuthor | multi-gate MOSFETs | - |
| dc.subject.keywordAuthor | short-channel effects | - |
| dc.subject.keywordAuthor | total-ionizing dose | - |
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