Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields
DC Field | Value | Language |
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dc.contributor.author | Park, Hyunik | - |
dc.contributor.author | Kim, Byung-Jae | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-06T13:23:46Z | - |
dc.date.available | 2021-09-06T13:23:46Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2012-11-05 | - |
dc.identifier.issn | 1094-4087 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/106955 | - |
dc.description.abstract | We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs on sapphire substrate were coated with SiO2 nanospheres, followed by inductively-coupled plasma etch to create nanorod-shapes with MQWs, which were transferred to the pre-patterned SiO2/Si wafer. This method allowed us to obtain nanorod LEDs with uniform length, diameter and qualities. Dielectrophoretic force created by non-uniform electric field was very effective at positioning the processed nanorods on the pre-patterned contacts. After aligned by non-uniform electric field, we observed bright EL from many nanorods, which had both cases (p-GaN/MQWs/n-GaN or n-GaN/MQWs/p-GaN). Therefore, bright ELs at different locations were observed under the various bias conditions. (C) 2012 Optical Society of America | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | OPTICAL SOC AMER | - |
dc.subject | GALLIUM NITRIDE NANOWIRES | - |
dc.subject | FABRICATION | - |
dc.subject | SILICON | - |
dc.subject | ARRAYS | - |
dc.subject | WAFER | - |
dc.subject | LASER | - |
dc.title | Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1364/OE.20.025249 | - |
dc.identifier.scopusid | 2-s2.0-84869054280 | - |
dc.identifier.wosid | 000311340300033 | - |
dc.identifier.bibliographicCitation | OPTICS EXPRESS, v.20, no.23, pp.25249 - 25254 | - |
dc.relation.isPartOf | OPTICS EXPRESS | - |
dc.citation.title | OPTICS EXPRESS | - |
dc.citation.volume | 20 | - |
dc.citation.number | 23 | - |
dc.citation.startPage | 25249 | - |
dc.citation.endPage | 25254 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.subject.keywordPlus | GALLIUM NITRIDE NANOWIRES | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | WAFER | - |
dc.subject.keywordPlus | LASER | - |
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