Fabrication of BaKFeAs intergrain nanobridges by using a focused ion beam
- Authors
- Hong, Sung-Hak; Lee, Sung Hoon; Lee, Soon-Gul; Jung, Soon-Gil; Lee, Nam Hoon; Kang, Won Nam
- Issue Date
- 11월-2012
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Ba0.6K0.4Fe2As2 superconductor; Intergrain nanobridge
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.9, pp.1449 - 1452
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 61
- Number
- 9
- Start Page
- 1449
- End Page
- 1452
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107038
- DOI
- 10.3938/jkps.61.1449
- ISSN
- 0374-4884
- Abstract
- We have studied the fabrication and the transport properties of Ba0.6K0.4Fe2As2 intergrain nanobridges patterned by using a focused ion beam (FIB). Prior to FIB etching, 8-A mu m-wide bridges were prepatterned from Ba0.6K0.4Fe2As2 films by using argon ion milling with a photoresist mask. The lowest-possible beam current of 1.5 pA was used for the FIB nanobridge pattern to minimize the etching damage to the bridge. The nanobridge contained a single grain boundary, and the nominal dimensions were 200 nm in width and 100 nm in length. We have also studied current-voltage (I-V) characteristics, the temperature-dependent critical current (I (c) ), and the normal-state resistance (RN). The transport measurements of the nanobridge showed a strong-coupling nature with a high critical current density of 1.25 x 10(6) A/cm(2) at 4.2 K, which is comparable to the intragrain value. The nanobridge showed the onset of a resistive transition at 37 K and zero resistance at 27 K. Measured I-V curves were dominated mainly by Josephson coupling, showing resistivelyshunted-junction (RSJ) behaviors with multiple transitions at low temperatures. The temperature dependence of the critical current was I (c) similar to (1 - T/T (c) )1.0.
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Collections - College of Science and Technology > Semiconductor Physics in Division of Display and Semiconductor Physics > 1. Journal Articles
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