Effects of annealing on ion-implanted Si for interdigitated back contact solar cell
DC Field | Value | Language |
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dc.contributor.author | Kang, Min Gu | - |
dc.contributor.author | Lee, Jong-Han | - |
dc.contributor.author | Boo, Hyunpil | - |
dc.contributor.author | Tark, Sung Ju | - |
dc.contributor.author | Hwang, Hae Chul | - |
dc.contributor.author | Hwang, Wook Jung | - |
dc.contributor.author | Kang, Hee Oh | - |
dc.contributor.author | Kim, Donghwan | - |
dc.date.accessioned | 2021-09-06T14:05:13Z | - |
dc.date.available | 2021-09-06T14:05:13Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2012-11 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107155 | - |
dc.description.abstract | Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 degrees C. P-implanted samples annealed at 950 degrees C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 degrees C. The implied V-oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 degrees C for B of the emitter and 950 degrees C for P of the front and back surface fields. The IBC cell had V-oc of 618 mV, J(sc) of 35.1 mA/cm(2), FF of 78.8%, and the efficiency of 17.1% without surface texturing. (C) 2012 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | EFFICIENCY | - |
dc.title | Effects of annealing on ion-implanted Si for interdigitated back contact solar cell | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Donghwan | - |
dc.identifier.doi | 10.1016/j.cap.2012.05.035 | - |
dc.identifier.scopusid | 2-s2.0-84863983786 | - |
dc.identifier.wosid | 000306420500037 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.12, no.6, pp.1615 - 1618 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1615 | - |
dc.citation.endPage | 1618 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001756368 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordAuthor | Implantation | - |
dc.subject.keywordAuthor | Annealing | - |
dc.subject.keywordAuthor | Si solar cell | - |
dc.subject.keywordAuthor | Interdigitated back contact | - |
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