Effects of temperature on ZnO hybrids grown by metal-organic chemical vapor deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, A-Young | - |
dc.contributor.author | Fang, Samseok | - |
dc.contributor.author | Lee, Do Han | - |
dc.contributor.author | Yim, So Young | - |
dc.contributor.author | Byun, Dongjin | - |
dc.date.accessioned | 2021-09-06T14:49:31Z | - |
dc.date.available | 2021-09-06T14:49:31Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2012-10 | - |
dc.identifier.issn | 0025-5408 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107274 | - |
dc.description.abstract | The growth of three-dimensional ZnO hybrid structures by metal-organic chemical vapor deposition was controlled through their growth pressure and temperature. Vertically aligned ZnO nanorods were grown on c-plane of sapphire substrate at 600 degrees C and 400 Torr. ZnO film was then formed in situ on the ZnO nanorods at 100, 600, and 700 degrees C and 10 Torr. High-resolution X-ray diffraction measurements showed that the ZnO film on the nanorods/sapphire grew epitaxially, and that the ZnO film/nanorods hybrid structures had well-ordered wurtzite structures. The hybrid ZnO structure was shown to be about 3-5 mu m by field-emission scanning electron microscopy. The hybrid formed at 600 degrees C showed better crystalline quality those formed at 100 C or 700 degrees C. These structures have potential applicability as nanobuilding blocks in nanodevices. Published by Elsevier Ltd. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | MICROCRYSTALLITE THIN-FILMS | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | SAPPHIRE | - |
dc.subject | GAN | - |
dc.title | Effects of temperature on ZnO hybrids grown by metal-organic chemical vapor deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Byun, Dongjin | - |
dc.identifier.doi | 10.1016/j.materresbull.2012.04.099 | - |
dc.identifier.wosid | 000309801800046 | - |
dc.identifier.bibliographicCitation | MATERIALS RESEARCH BULLETIN, v.47, no.10, pp.2888 - 2890 | - |
dc.relation.isPartOf | MATERIALS RESEARCH BULLETIN | - |
dc.citation.title | MATERIALS RESEARCH BULLETIN | - |
dc.citation.volume | 47 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 2888 | - |
dc.citation.endPage | 2890 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | MICROCRYSTALLITE THIN-FILMS | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | Nanostructures | - |
dc.subject.keywordAuthor | Oxides | - |
dc.subject.keywordAuthor | Thin films | - |
dc.subject.keywordAuthor | Epitaxial growth | - |
dc.subject.keywordAuthor | Vapor deposition | - |
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