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Front contact layer of multiphase silicon-carbon in thin film silicon solar cell

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dc.contributor.authorKim, Sun Ho-
dc.contributor.authorYou, Dong Joo-
dc.contributor.authorPark, Jin Hee-
dc.contributor.authorLee, Sung Eun-
dc.contributor.authorLee, Heon-Min-
dc.contributor.authorKim, Donghwan-
dc.date.accessioned2021-09-06T15:21:18Z-
dc.date.available2021-09-06T15:21:18Z-
dc.date.created2021-06-18-
dc.date.issued2012-09-24-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/107440-
dc.description.abstractIn order to increase the quantum efficiency as well as conversion efficiency, we propose the boron doped hydrogenated multiphase silicon-carbon (called as "multiphase silicon-carbon") as the front contact layer in thin film silicon solar cells. The multiphase silicon-carbon consists of amorphous carbon, amorphous silicon, and crystalline silicon-like clustering phase. We achieved a high conductivity and a low optical absorptance of multiphase silicon-carbon and compared it with the existing boron doped microcrystalline silicon. Applying this layer between transparent conductive oxide and the p layer, the amorphous silicon and silicon-germanium (a-Si/a-SiGe) double junction cell showed an increase of quantum efficiency in short wavelength and an improvement of the conversion efficiency by about 0.6% in 1 cm(2) area. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4756798]-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.subjectAMORPHOUS-SILICON-
dc.subjectINTERFACE-
dc.subjectOXIDE-
dc.titleFront contact layer of multiphase silicon-carbon in thin film silicon solar cell-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Donghwan-
dc.identifier.doi10.1063/1.4756798-
dc.identifier.scopusid2-s2.0-84874739459-
dc.identifier.wosid000309426800102-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.101, no.13-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume101-
dc.citation.number13-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusAMORPHOUS-SILICON-
dc.subject.keywordPlusINTERFACE-
dc.subject.keywordPlusOXIDE-
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