Front contact layer of multiphase silicon-carbon in thin film silicon solar cell
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sun Ho | - |
dc.contributor.author | You, Dong Joo | - |
dc.contributor.author | Park, Jin Hee | - |
dc.contributor.author | Lee, Sung Eun | - |
dc.contributor.author | Lee, Heon-Min | - |
dc.contributor.author | Kim, Donghwan | - |
dc.date.accessioned | 2021-09-06T15:21:18Z | - |
dc.date.available | 2021-09-06T15:21:18Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-09-24 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107440 | - |
dc.description.abstract | In order to increase the quantum efficiency as well as conversion efficiency, we propose the boron doped hydrogenated multiphase silicon-carbon (called as "multiphase silicon-carbon") as the front contact layer in thin film silicon solar cells. The multiphase silicon-carbon consists of amorphous carbon, amorphous silicon, and crystalline silicon-like clustering phase. We achieved a high conductivity and a low optical absorptance of multiphase silicon-carbon and compared it with the existing boron doped microcrystalline silicon. Applying this layer between transparent conductive oxide and the p layer, the amorphous silicon and silicon-germanium (a-Si/a-SiGe) double junction cell showed an increase of quantum efficiency in short wavelength and an improvement of the conversion efficiency by about 0.6% in 1 cm(2) area. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4756798] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | AMORPHOUS-SILICON | - |
dc.subject | INTERFACE | - |
dc.subject | OXIDE | - |
dc.title | Front contact layer of multiphase silicon-carbon in thin film silicon solar cell | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Donghwan | - |
dc.identifier.doi | 10.1063/1.4756798 | - |
dc.identifier.scopusid | 2-s2.0-84874739459 | - |
dc.identifier.wosid | 000309426800102 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.101, no.13 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 101 | - |
dc.citation.number | 13 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | OXIDE | - |
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