Titanium oxide nanoparticles spin-coated onto r-plane sapphire substrate: Effects on structural and optical properties of nonpolar a-plane GaN and InGaN/GaN multiple quantum wells
DC Field | Value | Language |
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dc.contributor.author | Kim, Ji Hoon | - |
dc.contributor.author | Hwang, Sung-Min | - |
dc.contributor.author | Son, Ji-Su | - |
dc.contributor.author | Baik, Kwang Hyeon | - |
dc.contributor.author | Song, Keun Man | - |
dc.contributor.author | Park, Jung Ho | - |
dc.date.accessioned | 2021-09-06T15:40:13Z | - |
dc.date.available | 2021-09-06T15:40:13Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-09-15 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107460 | - |
dc.description.abstract | The structural and optical properties of nonpolar a-plane (11-20) GaN and In0.18GaN0.82/GaN multiple quantum wells (MQWs) grown on TiO2 nanoparticle (NP)-coated r-plane (1-102) sapphire substrate have been investigated. A smooth surface morphology was observed by atomic force microscopy (AFM), indicating a good lateral overgrowth on TiO2 NPs. Transmission electron microscopy (TEM) images revealed a reduction in the density of basal stacking faults (BSFs) and threading dislocations (TDs) in the TiO2 NP-coated sample. From X-ray diffraction measurements, the broadening of omega-scan full width at half maximum (FWHM) was influenced by the tilt of the mosaic due to TiO2 NPs. A reduced PL-integrated intensity ratio (I-BSF/I-NBE) in low-temperature photoluminescence (PL) spectra of the a-plane GaN film grown over TiO2 NPs was consistent with TEM results. The improved room temperature-PL intensity of TiO2-embedded MQWs is associated with the increase in light extraction efficiency, due to the TiO2 NPs and air voids. Temperature-dependent PL spectra revealed that the dominant PL emission was attributed to localization of carriers in quantum wire-like regions, where the BSFs intersect the QWs. The observed quantum efficiency at 300 K also showed a good quantum confinement, even though alloy fluctuations might be expected in the QWs. (C) 2012 Elsevier B.V All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | STACKING-FAULTS | - |
dc.subject | EMISSION | - |
dc.subject | LUMINESCENCE | - |
dc.subject | IMPROVEMENT | - |
dc.subject | OVERGROWTH | - |
dc.subject | ANISOTROPY | - |
dc.subject | NITRIDE | - |
dc.title | Titanium oxide nanoparticles spin-coated onto r-plane sapphire substrate: Effects on structural and optical properties of nonpolar a-plane GaN and InGaN/GaN multiple quantum wells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jung Ho | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2012.06.036 | - |
dc.identifier.scopusid | 2-s2.0-84864050470 | - |
dc.identifier.wosid | 000307121900016 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.355, no.1, pp.101 - 108 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 355 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 101 | - |
dc.citation.endPage | 108 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | STACKING-FAULTS | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.subject.keywordPlus | OVERGROWTH | - |
dc.subject.keywordPlus | ANISOTROPY | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordAuthor | Metalorganic chemical vapor deposition | - |
dc.subject.keywordAuthor | Nitrides | - |
dc.subject.keywordAuthor | Titanium compounds | - |
dc.subject.keywordAuthor | Semiconducting III-V materials | - |
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