Ferroelectric and Piezoelectric Properties of 0.72Pb(Zr0.47Ti0.53)O-3-0.28Pb[(Zn0.45Ni0.55)(1/3)Nb-2/3]O-3 Thick Films for Energy Harvesting Device Application
DC Field | Value | Language |
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dc.contributor.author | Jeong, Young Hun | - |
dc.contributor.author | Kim, Kyoung Bum | - |
dc.contributor.author | Lee, Young-Jin | - |
dc.contributor.author | Cho, Jeong-Ho | - |
dc.contributor.author | Kim, Byoung-Ik | - |
dc.contributor.author | Paik, Jong-Hoo | - |
dc.contributor.author | Nahm, Sahn | - |
dc.date.accessioned | 2021-09-06T15:55:03Z | - |
dc.date.available | 2021-09-06T15:55:03Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-09 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107518 | - |
dc.description.abstract | The Ferroelectric and piezoelectric properties of 0.72Pb(Z(r0.47)Ti(0.53))O-3-0.28Pb[(Zn0.45Ni0.55)(1/3)Nb-2/3]O-3 (PZT-PZNN) piezoelectric thick films were investigated for application to energy harvesting devices. The PZT-PZNN thick films were fabricated by a conventional tape casting process. The sintered PZT-PZNN thick film was highly dense and flat when the annealed temperature was 1100 degrees C. It exhibited substantial ferroelectric and piezoelectric properties of P-r = 20.6 mu C/cm(2), d(33) = 370 pC/N, epsilon(T)(33)/epsilon(0) = 1185, and k(p) = 0.44. Moreover, its d(33) . g(33), which can characterize high energy density material, is as large as approximately 13050 x 10(-15) m(2)/N. Therefore, the PZT-PZNN thick film can be a potential piezoelectric material for application to energy harvesting devices. (C) 2012 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | SENSOR | - |
dc.subject | CANTILEVERS | - |
dc.subject | FABRICATION | - |
dc.subject | CERAMICS | - |
dc.title | Ferroelectric and Piezoelectric Properties of 0.72Pb(Zr0.47Ti0.53)O-3-0.28Pb[(Zn0.45Ni0.55)(1/3)Nb-2/3]O-3 Thick Films for Energy Harvesting Device Application | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Nahm, Sahn | - |
dc.identifier.doi | 10.1143/JJAP.51.09MD04 | - |
dc.identifier.wosid | 000310702900014 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.9 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 51 | - |
dc.citation.number | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SENSOR | - |
dc.subject.keywordPlus | CANTILEVERS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | CERAMICS | - |
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