Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer
DC Field | Value | Language |
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dc.contributor.author | Park, Jae-Seong | - |
dc.contributor.author | Jeon, Joon-Woo | - |
dc.contributor.author | Lee, Chang-Hyung | - |
dc.contributor.author | Choi, Chang-Hoon | - |
dc.contributor.author | Jin, Sungho | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-06T16:05:23Z | - |
dc.date.available | 2021-09-06T16:05:23Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-09 | - |
dc.identifier.issn | 0749-6036 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107579 | - |
dc.description.abstract | A Ru capping layer is employed to improve the thermal stability of Ag ohmic reflectors for high-power GaN-based light-emitting diodes (LEDs). The 20-nm-thick Ru capping layer is shown to be fairly effective in suppressing agglomeration by forming RuO2. The Ag/Ru contacts exhibit specific contact resistance of 8.1 x 10(-5) Omega cm(2) and reflectance of similar to 89% at a wavelength of 450 urn when annealed at 500 degrees C for 1 min, which are much better than that of Ag only contacts. Blue LEDs fabricated with the 500 degrees C-annealed Ag/Ru contacts give a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the 500 degrees C-annealed Ag only contacts. LEDs with the 500 degrees C-annealed Ag/Ru contacts show 25% higher output power (at 20 mA) than LEDs with the 500 degrees C-annealed Ag only contacts. X-ray photoemission spectroscopy examinations are performed to describe the improved electrical performance of the Ag/Ru contacts. (C) 2012 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | - |
dc.subject | P-TYPE GAN | - |
dc.subject | LASER LIFT-OFF | - |
dc.subject | CONTACT FORMATION | - |
dc.subject | OXIDIZED NI/AU | - |
dc.subject | MECHANISM | - |
dc.subject | SURFACES | - |
dc.title | Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.spmi.2012.05.021 | - |
dc.identifier.scopusid | 2-s2.0-84862750361 | - |
dc.identifier.wosid | 000308271400002 | - |
dc.identifier.bibliographicCitation | SUPERLATTICES AND MICROSTRUCTURES, v.52, no.3, pp.357 - 363 | - |
dc.relation.isPartOf | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.title | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.volume | 52 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 357 | - |
dc.citation.endPage | 363 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | P-TYPE GAN | - |
dc.subject.keywordPlus | LASER LIFT-OFF | - |
dc.subject.keywordPlus | CONTACT FORMATION | - |
dc.subject.keywordPlus | OXIDIZED NI/AU | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordAuthor | Light-emitting diode | - |
dc.subject.keywordAuthor | A Ru capping layer | - |
dc.subject.keywordAuthor | Ag ohmic reflector | - |
dc.subject.keywordAuthor | GaN | - |
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