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Realization of One-Diode-Type Resistive-Switching Memory with Cr-SrTiO3 Film
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Song, Min Yeong | - |
| dc.contributor.author | Seo, Yujeong | - |
| dc.contributor.author | Kim, Yeon Soo | - |
| dc.contributor.author | Kim, Hee Dong | - |
| dc.contributor.author | An, Ho-Myoung | - |
| dc.contributor.author | Park, Bae Ho | - |
| dc.contributor.author | Sung, Yun Mo | - |
| dc.contributor.author | Kim, Tae Geun | - |
| dc.date.accessioned | 2021-09-06T16:21:41Z | - |
| dc.date.available | 2021-09-06T16:21:41Z | - |
| dc.date.created | 2021-06-18 | - |
| dc.date.issued | 2012-09 | - |
| dc.identifier.issn | 1882-0778 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107674 | - |
| dc.description.abstract | The authors report a silicon-based one-diode-type resistive-switching memory (RRAM) device with self-rectifying properties and high electrical properties. The RRAM cell consisted of Al/Cr-SrTiO3/Si and revealed intrinsic diode properties, so that unwanted sneaky currents could be removed from an RRAM crossbar array without extra switching devices. The insulator-metal transition property of the proposed device was explained using the space-charge-limited conduction mechanism. The memory device showed good characteristics including high ON/OFF ratio (similar to 10(6)), low reset current (similar to 10(-11) A), high speed at low voltage (200 ns, 2 V), and reasonable endurance (>10(4) cycles) and retention characteristics (>10(4) s). (C) 2012 The Japan Society of Applied Physics | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
| dc.subject | SRTIO3 THIN-FILMS | - |
| dc.subject | CR-DOPED SRTIO3 | - |
| dc.title | Realization of One-Diode-Type Resistive-Switching Memory with Cr-SrTiO3 Film | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Sung, Yun Mo | - |
| dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
| dc.identifier.doi | 10.1143/APEX.5.091202 | - |
| dc.identifier.scopusid | 2-s2.0-84866353940 | - |
| dc.identifier.wosid | 000308694100005 | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS EXPRESS, v.5, no.9 | - |
| dc.relation.isPartOf | APPLIED PHYSICS EXPRESS | - |
| dc.citation.title | APPLIED PHYSICS EXPRESS | - |
| dc.citation.volume | 5 | - |
| dc.citation.number | 9 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | SRTIO3 THIN-FILMS | - |
| dc.subject.keywordPlus | CR-DOPED SRTIO3 | - |
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