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Effect of Sb doping on the opto-electronic properties of SnO2 nanowires
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Yoon Chul | - |
| dc.contributor.author | Yoon, Chang Hoon | - |
| dc.contributor.author | Park, Jaehyun | - |
| dc.contributor.author | Yoon, Jangyeol | - |
| dc.contributor.author | Han, Noh Soo | - |
| dc.contributor.author | Song, Jae Kyu | - |
| dc.contributor.author | Park, Seung Min | - |
| dc.contributor.author | Ha, Jeong Sook | - |
| dc.date.accessioned | 2021-09-06T16:21:52Z | - |
| dc.date.available | 2021-09-06T16:21:52Z | - |
| dc.date.created | 2021-06-18 | - |
| dc.date.issued | 2012-08-31 | - |
| dc.identifier.issn | 0040-6090 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107675 | - |
| dc.description.abstract | Antimony (Sb) doping of SnO2 nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO2 NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400 nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO2 NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO2 NW FETs. (C) 2012 Elsevier B.V. All rights reserved. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | ELSEVIER SCIENCE SA | - |
| dc.subject | PHOTOLUMINESCENCE PROPERTIES | - |
| dc.subject | GROWTH | - |
| dc.title | Effect of Sb doping on the opto-electronic properties of SnO2 nanowires | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Ha, Jeong Sook | - |
| dc.identifier.doi | 10.1016/j.tsf.2012.07.001 | - |
| dc.identifier.scopusid | 2-s2.0-84864765174 | - |
| dc.identifier.wosid | 000307286100005 | - |
| dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.520, no.21, pp.6471 - 6475 | - |
| dc.relation.isPartOf | THIN SOLID FILMS | - |
| dc.citation.title | THIN SOLID FILMS | - |
| dc.citation.volume | 520 | - |
| dc.citation.number | 21 | - |
| dc.citation.startPage | 6471 | - |
| dc.citation.endPage | 6475 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | PHOTOLUMINESCENCE PROPERTIES | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.subject.keywordAuthor | Tin oxide nanowires | - |
| dc.subject.keywordAuthor | Antimony doping | - |
| dc.subject.keywordAuthor | Photoluminescence | - |
| dc.subject.keywordAuthor | Field effect mobility | - |
| dc.subject.keywordAuthor | Defect state | - |
| dc.subject.keywordAuthor | UV sensing | - |
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