Electrical and lattice vibrational behaviors of graphene devices on flexible substrate under small mechanical strain
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Yun-Hi | - |
dc.contributor.author | Kim, Yoon-Joong | - |
dc.date.accessioned | 2021-09-06T16:26:23Z | - |
dc.date.available | 2021-09-06T16:26:23Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-08-20 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107685 | - |
dc.description.abstract | We present systematic experimental study on the electrical response and two-phonon Raman scattering mode of graphene under small uniaxial strain. The graphene, which was initially grown by chemical vapor deposition, was transferred to a transparent-flexible-polyethylene-terephthalate substrate. It was found that the electrical resistance increases as the stain is increased after a slight decrease in very small strain regimes of <0.20%. This is due to a relaxation of intrinsic ripples created during the transfer of the graphene to the polyethylene-terephthalate substrate. The gauge factor in the linear response regime was found to be about 22. Also, the 2D Raman bands of the strained graphene showed a distinct red-shift of -37 cm(-1) per 1% strain for the 2D(+) mode and -46 cm(-1) per 1% strain for the 2D(-) mode. Finally, we determined the Gruneisen parameters of gamma(2 Delta+) similar to 2.05 and gamma(2 Delta-) similar to 2.55 for the phonons in free-standing graphene without a substrate. Our results provide electro-mechanical parameters for graphene-based flexible devices and show the potential of graphene for measuring strain in future flexible electronics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4746285] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | CARBON NANOTUBES | - |
dc.title | Electrical and lattice vibrational behaviors of graphene devices on flexible substrate under small mechanical strain | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Yun-Hi | - |
dc.identifier.doi | 10.1063/1.4746285 | - |
dc.identifier.scopusid | 2-s2.0-84865462759 | - |
dc.identifier.wosid | 000308420800073 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.101, no.8 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 101 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | electrical Transport | - |
dc.subject.keywordAuthor | Phonon | - |
dc.subject.keywordAuthor | Strain engineering | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | nanoelectronics | - |
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