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Exploiting metallic glasses for 19.6% efficient back contact solar cell

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dc.contributor.authorKim, Suk Jun-
dc.contributor.authorKim, Se Yun-
dc.contributor.authorPark, Jin Man-
dc.contributor.authorHeo, Jung Na-
dc.contributor.authorLee, Jun Ho-
dc.contributor.authorLee, Sang Mock-
dc.contributor.authorKim, Do Hyang-
dc.contributor.authorKim, Won Tae-
dc.contributor.authorLim, Ka Ram-
dc.contributor.authorKim, Donghwan-
dc.contributor.authorPark, Sung Chan-
dc.contributor.authorKim, Hyoeng Ki-
dc.contributor.authorSong, Min Chul-
dc.contributor.authorPark, Jucheol-
dc.contributor.authorJee, Sang Soo-
dc.contributor.authorLee, Eun-Sung-
dc.date.accessioned2021-09-06T16:54:36Z-
dc.date.available2021-09-06T16:54:36Z-
dc.date.created2021-06-18-
dc.date.issued2012-08-06-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/107724-
dc.description.abstractAn interdigitated back contact silicon solar cell with conversion efficiency of 19.6% was fabricated by screen-printing the Ag paste. In the Ag paste, oxide glass frits were totally replaced by Al85Ni5Y8Co2, Al-based metallic glass (MG) ones. The thermoplastic forming of the MG in the super cooled liquid region led to large contact area at the interface between Ag electrodes and Si layers and thus to specific contact resistance (rho(c)) as low as 0.86 m Omega cm(2). The specific contact resistance was a function of both contact area and thickness of the interlayer formed at the interface working as a tunneling barrier. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742324]-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.subjectSURFACE CONDUCTIVITY-
dc.subjectALLOY SYSTEMS-
dc.subjectPOWER LOSS-
dc.subjectSILICON-
dc.subjectFORMABILITY-
dc.subjectSTABILITY-
dc.subjectCRYSTALS-
dc.subjectSTRENGTH-
dc.subjectBEHAVIOR-
dc.subjectFE-
dc.titleExploiting metallic glasses for 19.6% efficient back contact solar cell-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Donghwan-
dc.identifier.doi10.1063/1.4742324-
dc.identifier.scopusid2-s2.0-84865124454-
dc.identifier.wosid000307862400105-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.101, no.6-
dc.relation.isPartOfAPPLIED PHYSICS LETTERS-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume101-
dc.citation.number6-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusSURFACE CONDUCTIVITY-
dc.subject.keywordPlusALLOY SYSTEMS-
dc.subject.keywordPlusPOWER LOSS-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusFORMABILITY-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusCRYSTALS-
dc.subject.keywordPlusSTRENGTH-
dc.subject.keywordPlusBEHAVIOR-
dc.subject.keywordPlusFE-
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