Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes
DC Field | Value | Language |
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dc.contributor.author | Jeon, Joon-Woo | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.contributor.author | Namgoong, Gon | - |
dc.date.accessioned | 2021-09-06T17:10:38Z | - |
dc.date.available | 2021-09-06T17:10:38Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-08 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107783 | - |
dc.description.abstract | We investigated the electrical properties of Ti(30 nm)/Al(200 nm) contacts to molecular beam epitaxy-grown N-polar n-GaN with different carrier concentrations. Samples with carrier concentration of 1.2 x 10(18) cm(-3) showed nonohmic behaviors when annealed at 300A degrees C, but ohmic at 500A degrees C and 700A degrees C. All samples with carrier concentration of 2.0 x 10(19) cm(-3) exhibited ohmic behavior. x-Ray photoemission spectroscopy (XPS) results showed that, for samples with carrier concentration of 1.2 x 10(18) cm(-3), the Ga 2p core levels shift to lower or higher binding energy upon annealing at 300A degrees C or above 500A degrees C, respectively. Scanning transmission electron microscopy (STEM) results showed that, for samples with carrier concentration of 1.2 x 10(18) cm(-3), a wurtzite AlN layer (similar to 2 nm thick) formed at the metal/GaN interface when the samples were annealed at 500A degrees C. An interfacial wurtzite AlN layer also formed upon annealing at 700A degrees C, but its thickness was similar to 4 nm. Based on the XPS and STEM results, the ohmic contact formation and degradation mechanisms are described and discussed. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | LOW-RESISTANCE | - |
dc.subject | ELECTRONIC-PROPERTIES | - |
dc.subject | CRYSTAL-POLARITY | - |
dc.subject | SCHOTTKY DIODES | - |
dc.subject | ALN | - |
dc.subject | TEMPERATURE | - |
dc.subject | FABRICATION | - |
dc.subject | DEPENDENCE | - |
dc.subject | MECHANISM | - |
dc.subject | SURFACES | - |
dc.title | Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1007/s11664-012-2136-0 | - |
dc.identifier.scopusid | 2-s2.0-84885673853 | - |
dc.identifier.wosid | 000305748700016 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.41, no.8, pp.2145 - 2150 | - |
dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 41 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 2145 | - |
dc.citation.endPage | 2150 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | ELECTRONIC-PROPERTIES | - |
dc.subject.keywordPlus | CRYSTAL-POLARITY | - |
dc.subject.keywordPlus | SCHOTTKY DIODES | - |
dc.subject.keywordPlus | ALN | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordAuthor | Ohmic contact | - |
dc.subject.keywordAuthor | N-polar n-GaN | - |
dc.subject.keywordAuthor | vertical LED | - |
dc.subject.keywordAuthor | molecular beam epitaxy | - |
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