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Enhanced Power Efficiency of Organic Light-Emitting Diodes using Pentacene on CF4-Plasma-Treated Indium Tin Oxide Anodes

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dc.contributor.authorPark, Young Wook-
dc.contributor.authorChoi, Hyun Ju-
dc.contributor.authorChoi, Jin Hwan-
dc.contributor.authorPark, Tae Hyun-
dc.contributor.authorJeong, Jin-Wook-
dc.contributor.authorSong, Eun Ho-
dc.contributor.authorJu, Byeong Kwon-
dc.date.accessioned2021-09-06T17:17:16Z-
dc.date.available2021-09-06T17:17:16Z-
dc.date.created2021-06-18-
dc.date.issued2012-08-
dc.identifier.issn0741-3106-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/107822-
dc.description.abstractIn this letter, we demonstrate high-performance organic light-emitting diodes (OLEDs) by matching various hole injection-transport layers (HITLs) with plasma surface treatments. The OLED device with pentacene HITL on CF4-plasma-treated indium tin oxide showed the highest performance due to relatively improved hole injection and the high-hole-mobility characteristics of the pentacene. Using a high-electron-mobility material as an electron transport layer to improve the carrier balance of electrons and holes, the electroluminescent efficiency was further improved. These methods are simple and promising for the enhancement of OLED performances. These findings will be applicable to mobile displays that feature low electric power consumption.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectPLASMA TREATMENT-
dc.subjectHOLE-INJECTION-
dc.subjectPERFORMANCE-
dc.subjectMOBILITY-
dc.subjectGROWTH-
dc.titleEnhanced Power Efficiency of Organic Light-Emitting Diodes using Pentacene on CF4-Plasma-Treated Indium Tin Oxide Anodes-
dc.typeArticle-
dc.contributor.affiliatedAuthorPark, Young Wook-
dc.contributor.affiliatedAuthorJu, Byeong Kwon-
dc.identifier.doi10.1109/LED.2012.2199461-
dc.identifier.scopusid2-s2.0-84864453780-
dc.identifier.wosid000306923700020-
dc.identifier.bibliographicCitationIEEE ELECTRON DEVICE LETTERS, v.33, no.8, pp.1156 - 1158-
dc.relation.isPartOfIEEE ELECTRON DEVICE LETTERS-
dc.citation.titleIEEE ELECTRON DEVICE LETTERS-
dc.citation.volume33-
dc.citation.number8-
dc.citation.startPage1156-
dc.citation.endPage1158-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusPLASMA TREATMENT-
dc.subject.keywordPlusHOLE-INJECTION-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordAuthorCarrier mobility-
dc.subject.keywordAuthorCF4-plasma (CF4-P) treatment-
dc.subject.keywordAuthorhole injection-transport layer (HITL)-
dc.subject.keywordAuthorpentacene-
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