Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance
DC Field | Value | Language |
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dc.contributor.author | Song, Jun-Hyuk | - |
dc.contributor.author | Oh, Joon-Ho | - |
dc.contributor.author | Shim, Jae-Phil | - |
dc.contributor.author | Min, Jung-Hong | - |
dc.contributor.author | Lee, Dong-Seon | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-06T17:28:26Z | - |
dc.date.available | 2021-09-06T17:28:26Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2012-08 | - |
dc.identifier.issn | 0749-6036 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107885 | - |
dc.description.abstract | We report on the improvement in the performance of InGaN/GaN multi-quantum well-based solar cells by the introduction of a Cu-doped indium oxide (CIO) layer at the interface between indium tin oxide (ITO) p-electrode and p-GaN. The solar cell fabricated with the 3 nm-sample exhibits an external quantum efficiency of 29.8% (at a peak wavelength of 376 nm) higher than those (25.2%) of the cell with the ITO-only sample. The use of the 3-nm-thick CIO layer gives higher short circuit current density (0.72 mA/cm(2)) and fill factor (78.85%) as compared to those (0.65 mA/cm(2) and 74.08%) of the ITO only sample. Measurements show that the conversion efficiency of the solar cells with the ITO-only sample and the 3 nm-sample is 1.12% and 1.30%, respectively. Based on their electrical and optical properties, the dependence of the CIO interlayer thickness on the efficiency of solar cells is discussed. (C) 2012 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD | - |
dc.subject | GAN | - |
dc.title | Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1016/j.spmi.2012.05.002 | - |
dc.identifier.scopusid | 2-s2.0-84861834558 | - |
dc.identifier.wosid | 000306727200016 | - |
dc.identifier.bibliographicCitation | SUPERLATTICES AND MICROSTRUCTURES, v.52, no.2, pp.299 - 305 | - |
dc.relation.isPartOf | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.title | SUPERLATTICES AND MICROSTRUCTURES | - |
dc.citation.volume | 52 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 299 | - |
dc.citation.endPage | 305 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordAuthor | InGaN | - |
dc.subject.keywordAuthor | Solar cell | - |
dc.subject.keywordAuthor | Cu-doped indium oxide | - |
dc.subject.keywordAuthor | Ohmic contact | - |
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